Temperature-Dependent Reverse Recovery Characterization of SiC MOSFETs Body Diode for Switching Loss Estimation in a Half-Bridge

Nayak, Debiprasad; Kumar, Yakala Ravi; Kumar, Manish; Pramanick, Sumit

doi:10.1109/tpel.2021.3128947

Cited by 30 publications

(8 citation statements)

References 21 publications

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“…Remarkably, Equation ( 13) solely depends on typically available manufacturer datasheet information, since E loss,cap can be extracted from the C oss (v) curve (cf., Section 2), and τ can be obtained from the reverse-recovery charge data (i.e., Q rr , I sw ) by inverting Equation (12). In particular, with τ being approximately linearly dependent on the semiconductor junction temperature T j [16], two Q rr values at different temperatures are sufficient to roughly estimate the reverse-recovery losses for an arbitrary T j . It is worth noting that datasheet values for Q rr typically include the semiconductor's Q oss (V sw ), as the bipolar and capacitive charge components are indistinguishable during reverse-recovery charge measurements [17].…”

Section: Simplified Hard-switching Loss Modelmentioning

confidence: 99%

A Simplified Hard-Switching Loss Model for Fast-Switching Three-Level T-Type SiC Bridge-Legs

et al. 2022

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Hard-switching losses in three-level T-type (3LTT) bridge-legs cannot be directly estimated from datasheet energy loss curves, which are given for symmetric two-level half-bridge configurations only. The commutations in a 3LTT bridge-leg occur between semiconductors with different blocking voltages and/or current ratings, and involve a third semiconductor device in the switching transition, which contributes additional capacitive losses. This paper, therefore, describes a simplifed approach to estimate a lower bound for the hard-switching losses of 3LTT bridge-legs (note that the approach is applicable to other three-level topolgies as well). In view of the very fast switching speeds of wide-bandgap semiconductors, the model neglects voltage/current overlap losses and considers only the dominating charge-related loss contributions (semiconductor output capacitances, body diode reverse-recovery charge), thus requiring minimal information from datasheets. A direct experimental verification with an 800 V DC-link 3LTT bridge-leg (1200 V and 650 V SiC MOSFETs) operating with output currents up to 25 A confirms the good accuracy of the simplified switching-loss model.

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Section: Simplified Hard-switching Loss Modelmentioning

confidence: 99%

A Simplified Hard-Switching Loss Model for Fast-Switching Three-Level T-Type SiC Bridge-Legs

et al. 2022

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“…Many studies compare the performance of Si and SiC MOSFETs [16][17][18][19][20][21][22][23][24][25][26][27][28][29]. Other studies have shown the response of the latter at varying operating conditions, such as gate-source voltage, temperature, drain current, current slope and so on [30][31][32][33][34][35][36][37][38][39][40][41][42]. However, the effects of the working conditions during snappy recovery have hardly been investigated and experimentally verified so far [43][44][45][46].…”

Section: Introductionmentioning

confidence: 99%

Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions

Pennisi,

Pulvirenti,

Salvo

et al. 2024

Energies

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This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at improving efficiency. Indeed, reverse recovery is a part of the switching transient, but it has a significant role due to its impact on recovery energy and charge. The set of different operating conditions has been properly chosen to prevent or force the snappy recovery of the device under testing. The experimental results and specific software simulations have revealed phenomena unknown in the literature. More specifically, the analysis of the reverse recovery charge, Qrr, revealed two unexpected phenomena at high temperatures: it decreased with increasing gate voltage; the higher the device threshold, the higher the Qrr. TCAD-Silvaco (ATLAS v. 5.29.0.C) simulations have shown that this is due to a displacement current flowing in the drift region due to the output capacitance voltage variation during commutation. From the analysis of the snappy recovery, it has emerged that there is a minimum forward current slope, below which the reverse recovery cannot be snappy, even for a high current level. Once this current slope is reached, Qrr varies with the forward current only.

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“…With the rise in the global demand for developing high power density, high efficiency power electronics converters, precise calculation and closed form solution of losses in the converter is paramount for selection of switches and thermal design [1]. Power losses are broadly divided into conduction and switching losses.…”

Section: Introductionmentioning

confidence: 99%

“…Power losses are broadly divided into conduction and switching losses. In [1]- [3] extensive analysis on switching losses was presented. Switching losses are obtained from the assumption that the switching energy increases proportionately with the increase in the current flowing through the device [4].…”

Section: Introductionmentioning

confidence: 99%

Closed-Form Solution for Device Currents in Space-Vector Modulated Voltage Source Inverter Without Dead-time Consideration

Mirdoddi

Nag

2022

2022 IEEE 2nd International Conference on Sustainable Energy and Future Electric Transportation (SeFeT)

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Power losses are of significant importance for the design of converter. Conduction losses are mainly dependent on the currents flowing through the device. Owing to high switching frequency, device currents are quite complex. This paper presents with closed form solution for device currents in a space-vector modulated inverter. Initially, it discusses the considerations which need to be taken for deriving modulating equations of switches, and then formulates device currents. These equations facilitate for quick calculation of conduction losses in the converter at different load conditions.

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Temperature-Dependent Reverse Recovery Characterization of SiC MOSFETs Body Diode for Switching Loss Estimation in a Half-Bridge

Cited by 30 publications

References 21 publications

A Simplified Hard-Switching Loss Model for Fast-Switching Three-Level T-Type SiC Bridge-Legs

A Simplified Hard-Switching Loss Model for Fast-Switching Three-Level T-Type SiC Bridge-Legs

Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions

Closed-Form Solution for Device Currents in Space-Vector Modulated Voltage Source Inverter Without Dead-time Consideration

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