Temperature-dependent scanning tunneling spectroscopy on the Si(557)-Au surface

Sauter, Martin; Hoffmann, R.; Sürgers, Christoph; Löhneysen, H. v.

doi:10.1103/physrevb.89.075406

Cited by 7 publications

(8 citation statements)

References 34 publications

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“…Otherwise, this surface remains metallic at low temperature, i.e., no metal insulator transition and/or periodic lattice distortion have been observed as a function of temperature. 41 Here, we describe experiments that aim at the modification of the electronic properties of this atomic wire system by adsorption of atomic hydrogen. Compared with Si(553)−Au, higher chemical reactivity and interaction complexity are expected since the terraces are larger and Si adatom and restatom chains with unsaturated dangling bonds exist.…”

Section: ■ Introductionmentioning

confidence: 99%

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Plasmon Localization by H-Induced Band Switching

Mamiyev

Sanna²,

Ziese³

et al. 2019

J. Phys. Chem. C

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The strong sensitivity of plasmonic excitations on nanostructures to their environment is studied, going to the ultimate limit of single atomic chains. As a first step, we investigated how metallicity in self-assembled arrays of Au chains on Si(557) is modified by the simplest possible adsorbate, namely, atomic hydrogen. Both experimental studies and ab initio simulations were carried out combining plasmon spectroscopy with atomistic first-principles density functional calculations (DFT). While metallicity, in general, is only distorted by H-induced disorder, we also observed band gap opening in the measured plasmon dispersion at large momenta, k ∥, that limits the plasmonic excitation to an energy of 0.43 eV in the presence of H. In the long-wavelength limit, disorder leads to plasmonic standing wave formation on short sections of wires and finite excitation energies for k ∥ → 0. DFT shows that Si surface bands strongly hybridize with those of Au so that H adsorption on the energetically most favorable sites at the Si step edge and the restatom chain not only causes a significant shift of bands but also strongly changes the character of hybridization. Together with H-induced changes in band order, this causes band gap opening and reduced overlap of wave functions. These mechanisms were identified as the main reasons for plasmon localization. Interestingly, although the whole electronic system is modified by H adsorption, there is no direct interaction between H and the Au chains.

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Section: ■ Introductionmentioning

confidence: 99%

“…A restatom band crosses the Fermi level with an extremely flat slope close to the Γ point, and is thus less relevant in plasmon spectroscopy. Otherwise, this surface remains metallic at low temperature, i.e., no metal insulator transition and/or periodic lattice distortion have been observed as a function of temperature …”

Section: Introductionmentioning

confidence: 99%

Plasmon Localization by H-Induced Band Switching

Mamiyev

Sanna²,

Ziese³

et al. 2019

J. Phys. Chem. C

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“…Often, however, little is known about the structure of these underlying surfaces [4]. Among others, the Si(111) surface inclined by 10 • towards the [112] direction has been widely used for the formation of ordered nanostructures [4,6,8,9]. Based on scanning tunneling microscopy (STM) images Kirakosian et al reported that this vicinal Si(111) surface has the (557) orientation, with the period of the staircase being 5.73 nm, which correspond to 17 atomic rows [1].…”

Section: Introductionmentioning

confidence: 99%

Atomically resolved scanning force studies of vicinal Si(111)

et al. 2017

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Well-ordered stepped semiconductor surfaces attract intense attention owing to the regular arrangements of their atomic steps that makes them perfect templates for the growth of one-dimensional systems, e.g., nanowires. Here, we report on the atomic structure of the vicinal Si(111) surface with 10 degrees miscut investigated by a joint frequency-modulation scanning force microscopy (FM-SFM) and ab initio approach. This popular stepped surface contains 7 x 7-reconstructed terraces oriented along the Si(111) direction, separated by a stepped region. Recently, the atomic structure of this triple step based on scanning tunneling microscopy (STM) images has been subject of debate. Unlike STM, SFM atomic resolution capability arises from chemical bonding of the tip apex with the surface atoms. Thus, for surfaces with a corrugated density of states such as semiconductors, SFM provides complementary information to STM and partially removes the dependency of the topography on the electronic structure. Our FM-SFM images with unprecedented spatial resolution on steps coincide with the model based on a (7 7 10) orientation of the surface and reveal structural details of this surface. Two different FM-SFM contrasts together with density functional theory calculations explain the presence of defects, buckling, and filling asymmetries on the surface. Our results evidence the important role of charge transfers between adatoms, restatoms, and dimers in the stabilisation of the structure of the vicinal surface

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“…[1][2][3][4][5][6][7] Among such structures, monoatomic wires are candidates of interesting electronic properties such as Luttinger-liquid behavior. 8 The vicinal Si(111) surface with 10 • miscut towards the [1 1 1 1 2] direction is a popular stepped surface that can be used as a model system.…”

mentioning

confidence: 99%

“…Stepped well-ordered surfaces and, in particular, vicinal semiconductor surfaces, are well-suited for applications as nanotemplates for the fabrication of 1D nanostructures. − Among such structures, monatomic wires are candidates of interesting electronic properties such as Luttinger-liquid behavior . The vicinal Si(111) surface with 10° miscut toward the [1̅ 1̅ 2] direction is a popular stepped surface that can be used as a model system.…”

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confidence: 99%

Atomic-Scale Imaging of the Surface Dipole Distribution of Stepped Surfaces

León

Drees

Wippermann

et al. 2016

J. Phys. Chem. Lett.

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ABSTRACT:Stepped well-ordered semiconductor surfaces are important as nanotemplates for the fabrication of one-dimensional nanostructures. Therefore a detailed understanding of the underlying stepped substrates is crucial for advances in this field. Although measurements of step edges are challenging for scanning force microscopy (SFM), here we present simultaneous atomically resolved SFM and Kelvin probe force microscopy (KPFM) images of a silicon vicinal surface. We find that the local contact potential difference is large at the bottom of the steps and at the restatoms on the terraces, whereas it drops at the upper part of the steps and at the adatoms on the terraces. For the interpretation of the data we performed density functional theory (DFT) calculations of the surface dipole distribution. The DFT images accurately reproduce the experiments even without including the tip in the calculations. This underlines that the high-resolution KPFM images are closely related to intrinsic properties of the surface and not only to tip-surface interactions.Stepped well-ordered surfaces and, in particular vicinal semiconductor surfaces, are well suited for applications as nanotemplates for the fabrication of one-dimensional nanostructures. [1][2][3][4][5][6][7] Among such structures, monoatomic wires are candidates of interesting electronic properties such as Luttinger-liquid behavior. 8 The vicinal Si(111) surface with 10 • miscut towards the [1 1 1 1 2] direction is a popular stepped surface that can be used as a model system. This surface contains (7×7) reconstructed terraces oriented along the Si(111) direction, a well characterized and understood surface, separated by a stepped region. The presence of the (7 × 7) reconstructed areas makes this vicinal system an ideal testbed for surface characterization techniques and investigating its rich morphology and electronic features. Teys et al. proposed that this surface is oriented along the (7 7 10) direction. 2Within Teys model, the stepped part consists of a periodically ordered triple step with a height of 3 atomic layers and a width of 16 atomic rows, corresponding to a lateral periodicity of 5.2 nm.Scanning force microscopy (SFM), particularly in ultra-high vacuum (UHV) and its non-contact mode, has become one of the standard techniques for analyzing the topographic properties of flat surfaces at the atomic scale. 9On conducting surfaces, SFM provides complementary information to that obtained with scanning tunneling microscopy (STM), 10,11 in some cases with even higher spatial resolution. 12,13The atomic resolution capability of SFM arises from the short-range forces acting between an atomically sharp tip and a clean surface. 14 The differences between the work functions of the probing tip and the surface of the sample give rise to contact potential differences (CPD) that can be measured using Kelvin probe force microscopy (KPFM). 15-19The origin of atomic-scale KPFM contrast is still under discussion, since the work function is considered as a macroscopic concep...

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Temperature-dependent scanning tunneling spectroscopy on the Si(557)-Au surface

Cited by 7 publications

References 34 publications

Plasmon Localization by H-Induced Band Switching

Plasmon Localization by H-Induced Band Switching

Atomically resolved scanning force studies of vicinal Si(111)

Atomic-Scale Imaging of the Surface Dipole Distribution of Stepped Surfaces

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