Temperature dependent site change of In in AlN and GaN

Schmitz, J.; Penner, Jakob; Lorenz, K.; Vianden, R.

doi:10.1002/pssa.200777453

“…Recent PAC-studies of 111 In-implanted GaN indicated that after annealing In forms a complex with an unidentified defect that is strongly dependent on the temperature at which the measurement is performed [3]. An equivalent behaviour was also reported for 111 In implanted AlN [4,5]. Here we present temperature dependent PAC studies with the probe 181 Hf implanted into GaN.…”

Section: Introductionmentioning

confidence: 67%

Temperature dependence of the electric field gradient in GaN measured with the PAC-probe 181Hf

Lorenz

¹

,

Geruschke

²

,

Alves

³

et al. 2007

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Epitaxial GaN layers were implanted with radioactive 181 Hf ions in order to study the temperature dependence of the electric field gradient (EFG) at the site of the probes after rapid thermal annealing at 1273 K. Results are compared to recent measurements with the 111 In probe that showed a surprising reversible increase of the fraction of undisturbed substitutional probe atoms at measuring temperatures above room temperature (Lorenz et al., Appl Phys Lett 80:4531, 2002). After implantation and annealing the majority of 181 Hf atoms are incorporated into undisturbed substitutional lattice sites and experience an axial symmetric EFG with a quadrupole interaction frequency (QIF) of ∼336 MHz at RT and a low frequency distribution. At measuring temperatures between 20 and 1100 K the QIF increases linearly by ∼4% in good agreement with point charge model calculations taking into account the thermal lattice expansion. In contrast, measurements with the 111 In probe showed a strong increase by ∼50% of the QIF above RT. Additionally, unlike for 111 In, for measurements with 181 Hf the substitutional fraction stays unchanged for elevated measuring temperatures.

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“…In-V N was also observed in AlInN where the characteristic signal is even more pronounced than in GaInN [5]. In-V N could be a competing exciton trap and may be involved in the processes leading to the high efficacy.…”

Section: Introductionmentioning

confidence: 91%

“…In previous measurements [3][4][5] it was shown, that in addition to indium on substitutional cation (Ga/Al) sites a configuration attributed to an indium nitrogenvacancy (…”

Section: Introductionmentioning

confidence: 99%

An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

Kessler

¹

,

Lorenz

²

,

Miranda

³

et al. 2010

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The role of indium in GaN and AlN films is investigated with the method of the perturbed angular correlation (PAC). Using the PAC probe 111 In in addition to indium on substitutional cation sites a large fraction of probes is found in a distinctly different microscopic environment which was attributed to the formation of an indium nitrogen-vacancy (V N ) complex. The influence of an electron capture induced after ef fect is ruled out by additional measurements with the PAC probes 111m Cd and 117 Cd and using GaN with different dopants. It is shown that the V N is not bound to substitutional Cd impurities suggesting that the In-V N complex formation is a particularity of In in GaN and AlN. Finally, a preliminary model is presented to explain the temperature behavior of the electric field gradient, observed in the In-V N complex measured with 111 In.This work reports on PAC measurements in InGaN and AlInN using Cd-111m and Cd-117 probes. The results show that a signal previously observed using In-111 arises from an In-nitrogen-vacancy complex and is not influenced by an electronic aftereffect. The background, experimental method, and results are all described well. In short, the work reported is of high quality, and I recommend the manuscript for publication without modification.

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“…In previous measurements [3][4][5] it was shown, that in addition to indium on substitutional cation (Ga/Al) sites a configuration attributed to an indium nitrogenvacancy (V N ) defect complex (In-V N ) is observed with the PAC probe 111 In. The electric field gradient (EFG) of the In-V N is oriented parallel to the c-axis of the crystal.…”

Section: Introductionmentioning

confidence: 98%

An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

Kessler¹,

Lorenz²,

Miranda³

et al. 2010

Hfi / Nqi 2010

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0

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The role of indium in GaN and AlN films is investigated with the method of the perturbed angular correlation (PAC). Using the PAC probe 111 In in addition to indium on substitutional cation sites a large fraction of probes is found in a distinctly different microscopic environment which was attributed to the formation of an indium nitrogen-vacancy (V N ) complex. The influence of an electron capture induced after ef fect is ruled out by additional measurements with the PAC probes 111m Cd and 117 Cd and using GaN with different dopants. It is shown that the V N is not bound to substitutional Cd impurities suggesting that the In-V N complex formation is a particularity of In in GaN and AlN. Finally, a preliminary model is presented to explain the temperature behavior of the electric field gradient, observed in the In-V N complex measured with 111 In.This work reports on PAC measurements in InGaN and AlInN using Cd-111m and Cd-117 probes. The results show that a signal previously observed using In-111 arises from an In-nitrogen-vacancy complex and is not influenced by an electronic aftereffect. The background, experimental method, and results are all described well. In short, the work reported is of high quality, and I recommend the manuscript for publication without modification.

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Temperature dependent site change of In in AlN and GaN

Cited by 4 publications

References 5 publications

Temperature dependence of the electric field gradient in GaN measured with the PAC-probe 181Hf

Temperature dependence of the electric field gradient in GaN measured with the PAC-probe 181Hf

An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

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