Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs

Murti, Made Ricki; Laskar, J.; Nuttinck, S.; Yoo, Seung Joon; Raghavan, A.; Bergman, J.; Bautista, J. J.; Lai, R.; Grundbacher, R.; Barsky, M.; Chin, Peter G.; Liu, P.H.

doi:10.1109/22.899016

Cited by 32 publications

(10 citation statements)

References 16 publications

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“…The most important, unexpected finding of our work is that the measured noise temperature decreases from 7.4 to 4.5 K, a factor of 1.64 when the absolute temperature is decreased from 313 to 233 K, a factor of 1.34, an effect that is contrary to thermal noise which produces noise temperature proportional to physical temperature. This was first observed over 20 years ago by Murti et al [5] which showed a 1.92 reduction in minimum noise temperature for a 1.5 reduction of absolute temperature from 300 to 200 K. However, this finding was ignored and most subsequent very low noise LNA papers concentrated on noise at cryogenic temperatures. Our careful measurements show the same effect, which has not been explained to date but is a topic of current research, see [6], [7], which is beyond the scope of the applied experimental work presented here.…”

Section: Introductionmentioning

confidence: 95%

Low Noise Amplifier With 7-K Noise at 1.4 GHz and 25 °C

Weinreb

Shi

2021

IEEE Trans. Microwave Theory Techn.

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This article describes a low noise amplifier which is believed will have a transformative impact because of the following characteristics: 1) the noise temperature at a physical temperature of 25 • C is a factor of 4 lower than typical commercial LNAs; 2) the noise decreases to 4.5 K at a temperature of −40 • C, a temperature realizable with solid-state coolers; 3) the LNA has an integrated, extremely stable noise source to facilitate measurement of system noise temperature; and 4) the amplifier is powered by a dc voltage and controlled by a tone signal on the RF output cable thus requiring no additional wiring. The amplifier benefits systems in the low microwave frequency range with low background temperature, such as those for space communications and radio astronomy, but without the capital and maintenance costs of cryogenic systems. This article describes the construction and test results with an emphasis on the manufacturability and accuracy of the noise measurements. Finally, the noise of a system deploying the LNA is described.

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Section: Introductionmentioning

confidence: 95%

Low Noise Amplifier With 7-K Noise at 1.4 GHz and 25 °C

Weinreb

Shi

2021

IEEE Trans. Microwave Theory Techn.

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“…But in spite of the recent technological advances, there are systems, mainly dedicated to radio astronomy, in which the room temperature noise of any present device is not sufficiently low. For such applications, it is necessary the use of cryogenically cooled low noise amplifiers (LNAs) [8,12,13], so that the understanding of the physical mechanisms at the origin of the noise in HEMTs at low temperature is also very important.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo modelling of noise in advanced III–V HEMTs

et al. 2014

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One of the main objectives of modern Microelectronics is the fabrication of devices with increased cutoff frequency and decreased level of noise. At this moment, the best devices for high-frequency, low-noise behavior are High electron mobility transistors (HEMTs) based on InGaAs and InAs channels. In this work, a complete analysis of ultrashort-gate HEMTs has been carried out by using a semiclassical Monte Carlo simulator, paying special attention to the noise performance. The validity of the model has been checked through the comparison of the simulated results with static, dynamic and noise measurements in real HEMTs. In order to reproduce the experimental results, we have included in the model some important real effects such as degeneracy, surface charges, presence of dielectrics and contact parasitics. The cryogenic performance of the HEMTs has also been analyzed. The influence of the parasitic resistances, width of the devices, value of the δ-doping and recess length has been analyzed when scaling down the gate length of the transistors to 50 nm aiming at achieving higher cutoff frequencies and better noise performance. The important effect of the impact ionization mechanisms and the consequent kink effect on the noise in both InGaAs and InAs based HEMTs have also been studied. Finally the advantages of the use of a double gate topology are quantified.

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“…In the design of microwave and millimeter-wave low-noise amplifiers, both the small-signal model and noise model of the constituting transistors need to be known so they can be imported into the circuit simulators [1]- [6]. Compared with its small-signal model, the transistor's noise model is more difficult to construct, for it demands accurate measurements of the sensitive, and thus elusive, noise parameters, which in turn impose some stringent requirements on the noise measurement setup [7]- [14].…”

Section: Introductionmentioning

confidence: 99%

An Analytical Approach on the Determination of Generator Reflection Coefficients Used in the Noise-Parameter Measurement

Sang

2007

Int J Infrared Milli Waves

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In performing microwave and millimeter-wave noise-parameter measurements, a set of generator reflection coefficients and their corresponding noise temperatures need to be measured first. Allowing measurement errors, values of these generator reflection coefficients will affect the accuracy of final results. Though simulation alone can be used to find out on the Smith chart the preferred pattern of the generator reflection coefficients, its analytical counterpart has not been explored yet. This paper intends to derive the related mathematical expressions, thus complements and strengthens the simulation method.

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Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs

Cited by 32 publications

References 16 publications

Low Noise Amplifier With 7-K Noise at 1.4 GHz and 25 °C

Low Noise Amplifier With 7-K Noise at 1.4 GHz and 25 °C

Monte Carlo modelling of noise in advanced III–V HEMTs

An Analytical Approach on the Determination of Generator Reflection Coefficients Used in the Noise-Parameter Measurement

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