Temperature dependent transport characteristics of graphene/n-Si diodes

Parui, Subir; Ruiter, Roald; Zomer, P. J.; Wojtaszek, Mateusz; Wees, B. J. van; Banerjee, T.

doi:10.1063/1.4905110

Cited by 55 publications

(44 citation statements)

References 18 publications

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“…of ) with forward bias, meaning that the application of a forward bias homogenize the barrier fluctuations. The value of ~74 at zero bias is in agreement or below what has been reported for planar Gr/semiconductor heterojunctions 44,46,49 . This lead to the remarkable result that the tip-geometry and the transfer process do not introduce extra-inhomogeneity.…”

Section: Fig 3csupporting

confidence: 89%

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

et al. 2016

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We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on ntype Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. 2These features render the device a photodetector with responsivity (3 / for white LED light at 3 2 ⁄ intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution.This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.

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Section: Fig 3csupporting

confidence: 89%

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

et al. 2016

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“…Similar values have been reported for graphene junctions with other standard semiconductors. [ 12,13,34,35 ] The I sat values are then extracted from the same fi t by Equation ( 2) as the extrapolated current at V DS = 0 (from Figure 3 d, I sat = 2.6 × 10 −11 A for graphene/C 60 /Al diode), and are used afterwards for the energy barrier extraction.…”

Section: Resultsmentioning

confidence: 99%

Gate‐Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction

Parui

Pietrobon

Ciudad

et al. 2015

Adv Funct Materials

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wileyonlinelibrary.comGraphene, [ 11 ] a one-atom thick zero band gap semiconductor has allowed the development of new electronic device schemes such as the graphene-barristor, [ 12 ] the graphene-vertical-fi eld-effecttransistor (VFET), [13][14][15][16] and the graphenebase hot electron transistor. [ 17 ] In organic electronics, graphene can be an ideal choice to use as the injector (or source) electrode for a VFET since its Fermi level, its corresponding work function and its available low density of states (DOS) [ 18 ] can all be easily modulated, providing a tunable energy barrier which eventually controls the device operation. In addition, the electric fi eld produced by a gate electrode will extend into the organic semiconductor, as the monolayer thickness of graphene is insuffi cient to fully screen it. [ 13,19 ] In order to increase the performance of organic thin fi lm transistors (OTFT) compared with the inorganic counterparts, a unique vertical architecture with a molecular semiconductor (C 60 ) was fi rst demonstrated using a thin and rough (with a roughness comparable to the thickness) metal electrode. [ 20 ] A clear advantage of the vertical over the lateral organic transistor geometry is that the channel length is controlled by the thickness of the organic layer and the devices can be downsized in both the lateral and the vertical directions. In the case of a perforated metallic source electrode, the electric fi eld can directly access the metal/organic interface which causes the energy level realignment (similar to the band bending in inorganic semiconductor) in the organic semiconductor. Although Ma and Yang have reported a large on/off current ratio (≈10 6 ), the high DOS and the fi xed work function of the metallic electrode (injector) limits its application to a few organic semiconductors. [ 20 ] Later on, Liu et al. introduced a carbon nanotube-based source electrode with low DOS in organic VFETs for a wide range of organic semiconductors. [ 21 ] Carbon nanotubes allow new mechanisms for transistor operation such as the tuning of the gate modulated energy barrier. Graphene, similar to carbon nanotubes in its electrical and mechanical properties, has additional advantages over them due to the large-scale availability (chemical vapor deposition (CVD)-grown graphene) of chemically inert high quality 2D surfaces. [ 14,22 ] On the other hand, fullerene (C 60 ) is one of the most widely studied molecular semiconductors [ 2,5,20,[23][24][25] and a common choice as an active media for transistors. C 60 has an energy gap ( E g = 1.7 eV), between its highest occupied molecular orbital Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor JunctionSubir Parui , * Luca Pietrobon , David Ciudad , Saül Vélez , Xiangnan Sun , Fèlix Casanova , Pablo Stoliar , and Luis E. Hueso * The formation of an energy-barrier at a metal/molecular semiconductor junction is a universal phenomenon which limits the performance of many molecular semiconductor-based electronic devices, from fi eld-effect trans...

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“…. To explain the temperature dependence of B  , S. Kim et al [152] suggested the barrier inhomogeneity model [47] [54][153]- [154], which considers a Gaussian distribution of the barrier heights around a mean value BM  and with standard deviation σ:…”

Section: Experimental Aspects Of the Graphene/semiconductor Junctionmentioning

confidence: 99%

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

2016

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In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the exiting semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.

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Temperature dependent transport characteristics of graphene/n-Si diodes

Cited by 55 publications

References 18 publications

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Gate‐Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

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