2010
DOI: 10.1063/1.3478708
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Temperature dependent transport properties of p-Pb1−xMnxSe films

Abstract: Hall measurements are performed to survey electrical properties of p-Pb1−xMnxSe (x≈0.04) films grown by molecular beam epitaxy technique. It is indicated that these films are approaching the metal-insulator transition from the metallic side. Weak localization effect was observed up to about 50 K. The deduced phase-breaking time τϕ on temperature is interpreted according to the concept of the electron–electron scattering in highly disordered bulk conductors.

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Cited by 4 publications
(1 citation statement)
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“…Several routes to synthesize Mn-doped PbS and PbSe nanostructures have been attempted, including solution synthesis, , molecular-beam epitaxy (MBE), and the fusion method in a glass matrix . One major difficulty of doping nanostructures is that the impurities tend to migrate to the surface by a self-purification process .…”
Section: Introductionmentioning
confidence: 99%
“…Several routes to synthesize Mn-doped PbS and PbSe nanostructures have been attempted, including solution synthesis, , molecular-beam epitaxy (MBE), and the fusion method in a glass matrix . One major difficulty of doping nanostructures is that the impurities tend to migrate to the surface by a self-purification process .…”
Section: Introductionmentioning
confidence: 99%