Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Abstract

Hall effect and electrical resistivity measurements were carried out on undoped InAs thin films grown by molecular-beam epitaxy directly on ͑001͒ GaP substrates. The large lattice mismatch between these two compounds results in a high density array of misfit dislocations at the heterointerface and threading dislocations in the InAs epilayer. The threading dislocation density varies with epilayer thickness, with the largest proportion being present near the heterointerface. This leads to variation of both the carrier concentration and electron mobility with thickness. Consequently, a multilayer analysis was used to interpret the transport data. This analysis yields a temperature-independent carrier concentration, which indicates degenerate donor levels in this narrow band-gap material. Room temperature mobilities in excess of 10 000 cm 2 /V s were obtained for thick InAs layers despite dislocation densities of 10 10 cm Ϫ2 . The relative insensitivity of the mobility to temperature suggests that temperature-independent scattering dominates over ionized impurity/defect and phonon scattering.

Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si:H thin films

“…[33], the competition of two mechanisms (i.e., impurity scattering effect and crystallinity) proposed below can explain the Hall mobility behavior very well. The carrier concentration increases rapidly due to the increase of doping efficiency and impurity concentration added into nc-Si:H. And the more impurity atoms in the nc-Si:H films, the stronger effect of impurity scattering which includes both the ionized and neutral impurity scattering [34], leading to the decrease of mobility. In the meantime, larger crystallinity X c (corresponding to larger hydrogen dilution ratio, see Table 1) tends to enhance the Hall mobility, which could be explained by a grain boundary trapping model [35].…”

Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature

“…The constant ρ S at varied temperatures of the channel is reasonable due to its degenerate nature. 31,32 We only assume diffusive spin transport from the single FM electrode in the input to the nonlocal detection FM electrode. With the values of L S , ρ S , W, and ΔR 0 from the fitting lines, as shown in Fig.…”

Structural and optical characterization of InAs nanocrystals deposited by spray pyrolysis

“…InAs is one of the most important III -V semiconductors, has been widely used for optoelectronic devices [1]. InAs Nano films synthesized by various methods are good candidate materials for strong quantum confinement, since the values of aB of InAs are relatively large (34nm),and because of the possibility of engineering their energy band structure and lattice parameters independently to the desired value [2,3].…”