Temperature dependent tuning of the flat band voltages of TiO2/Si interfaces

Nasim, Faisal; Ali, Awais; Bhatti, Arshad Saleem; Naseem, Shahzad

doi:10.1063/1.3665208

Cited by 12 publications

(7 citation statements)

References 26 publications

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“…The rutile TiO 2 phase was much favorable and stable phase as it did not need much of oxygen. 20 However, annealing in oxygen rich environment helps to recover the anatase phase, 21 which it did in the exposed films. Therefore, most of the reflections from the anatase phase were observed in the exposed annealed films.…”

Section: A Xrd Analysismentioning

confidence: 99%

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

Ishfaq

Khan

Bhopal

et al. 2014

Journal of Applied Physics

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In this paper, we report the effect of 1.5 MeV proton beam irradiation dose on the structural and electrical properties of TiO 2 thin films deposited on n-Si substrates. The formation and transformation of different TiO 2 phases in the irradiated thin films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). X-ray diffraction measurements revealed that the as grown film was rich in Ti 5 O 9 phase and then converted to mixed phases of TiO 2 (rutile and anatase) after exposure with radiation doses up to 5 Â 10 14 cm À2 . The XPS results revealed the formation of oxygen vacancy (negative) traps in the exposed TiO 2 films, which showed strong dependence on the dose. The C-V measurements showed that proton radiations also damaged the Si substrate and created deep level defects in the substrate, which caused a shift of 0.26 6 0.01 V in the flat band voltage (V FB ). I-V measurements showed that the ideality factor increased and the rectification ratio dropped with the increase in the radiation dose. The present study showed the stability of TiO 2 /Si interface and TiO 2 film as an oxide layer against proton radiations. V C 2014 AIP Publishing LLC. [http://dx.

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Section: A Xrd Analysismentioning

confidence: 99%

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

Ishfaq

Khan

Bhopal

et al. 2014

Journal of Applied Physics

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“…TiO 2 is also considered a potential alternate candidate as gate oxide in deep-submicron MOSFETs or DRAMs due to its high dielectric constant. 10,11 TiO 2 has three natural polymorphs: anatase, rutile, and brokite being the least abundant of the three. Anatase has 3 times lager c/a ratio than rutile.…”

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Improvement of (004) texturing by slow growth of Nd doped TiO2 films

Ali

Yassitepe

Ruzybayev

et al. 2012

Journal of Applied Physics

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Enhancement of optical absorption by modulation of the oxygen flow of TiO2 films deposited by reactive sputteringIn this work, we present preferred (004) texturing of sputter deposited titanium dioxide (TiO 2 ) films on glass substrates as a consequence of Nd doping at very slow growth rate. Nd concentration was varied from 0.0 to 2.0 atomic percent (at. %) in TiO 2 thin films deposited under identical growth conditions, i.e., the growth rate of 0.6 Å /s and at 500 C. At 2 at. % Nd, complete texturing along (004) plane was observed, as indicated by the X-ray diffraction analyses. Morphology of the deposited TiO 2 films from pure to 2 at. % Nd doped TiO 2 films showed faceted to planar growth. Visualization of electrical and structural analysis (VESTA) software revealed that the change in the morphology was due to preferential growth in (004) orientation. Raman spectroscopy highlighted the phonon confinement in the Eg mode, and a red shift was observed due to an increase in the anti-symmetry in bonding with increased Nd concentration. XPS results confirmed the variation in oxygen vacancy concentration along with the reduction of Ti and Nd valance states with the change in the dopant concentration. Our experiments confirmed that the substitution of Nd at Ti sites was responsible for texturing in (004) orientation and this was possible by growing films at a very slow rate. V C 2012 American Institute of Physics. [http://dx.

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“…The hysteresis behavior could be observed in the C−V characteristics measured under forward and reverse voltage sweep in the −30 V to 30 V range. The flat band voltage (V FB ) values, determined from dark C−V measurements by extending the linear region in the plot of 1/C 2 to the voltage axis [ 38 ], vary from 7.3 V (deposition process A) to 9.6 V (deposition process B) and 10.2 V (deposition process C). The positive shift of V FB indicates the charge trapping (electrons) characteristics that are related to the gradual increase in the oxidation state from V 4+ to V 5+ in V x O y as−grown films.…”

Section: Resultsmentioning

confidence: 99%

Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering

Plugaru

Mihalache

Romanițan

et al. 2023

Sensors

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In this study we analyzed the structure and light-sensing properties of as-deposited vanadium oxide thin films, prepared by RF sputtering in different Ar:O2 flow rate conditions, at low temperature (e.g., 65 °C). X-ray diffraction (XRD), Scanning Electron Microscopy (SEM-EDX), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to analyze the film microstructure, composition and the oxidation states of vanadium ions. The SEM micrographs evidence VxOy films with smooth surfaces, whereas the XRD patterns show their amorphous structure. Raman spectra indicate an increased structural disorder in the films deposited in Ar:O2 flow comparatively with those deposited solely in Ar flow. The XPS data suggest the modification of the oxidation state from V4+ to V5+, thus proving the formation of the V2O5 phase when increasing the oxygen content, which further affects the films’ optical properties. We observed a good stability of the photogenerated current in Si/SiO2/VxOy/TiN heterostructures upon excitation with pulses of UV (360 nm), VIS (white light) and NIR (860 nm) light. The responsivity, detectivity and linear dynamic range parameters increase with the O/V ratio in the VxOy films, reaching comparable values with photodetectors based on crystalline V2O5 or VO2.

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Temperature dependent tuning of the flat band voltages of TiO2/Si interfaces

Abstract: Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxidesemiconductor field-effect transistor applications

Cited by 12 publications

References 26 publications

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

Improvement of (004) texturing by slow growth of Nd doped TiO2 films

Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering

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