Temperature distribution dependence on refractory anode thickness in a vacuum arc

Sn Thin Film Deposition using a Hot Refractory Anode Vacuum Arc

“…Due to large difference between the very low Sn melting temperature (T m =232C) and relatively large Sn boiling point (T b =2687C) there is a relatively large MP fraction in the Sn cathode erosion. This fact explains the large MP contamination detected in Sn films, compared to Cu, Ti, and also to Al, Zn (I<150 A) for which the difference between T m and T b is significantly lower [9].…”

“…7 for Sn (60 and 30 mm diameter cathodes). For comparison previously measured MP density for Al, Zn, Cu, Cr cathodes [6,9] are also presented. The substrates were exposed for 15 s after 60 s of arcing, L=110 mm, h=10 mm.…”

“…The HRAVA phenomena and deposition characteristics were investigated previously for thin film materials such Cu, Ti, Cr, Al and Zn [6,7]. Deposition rates of 1-3 µm/min were obtained with arc current in the 150-300A range.…”

“…However Sn deposition was only tested briefly [7] demonstrating relatively large rate of deposition. The details of very low melting Sn film characteristic were not investigated previously.…”

“…Fig.7. Dependence of MP density on arc current for Sn (measured here), Zn and Al (left axis) and for Cu, Cr (right axis)[6,9], recessed cathodes. The substrate was exposed after 60 s for 15 s, L=110 mm.…”