2010
DOI: 10.1088/0953-2048/24/1/015003
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Temperature distribution in a stack of intrinsic Josephson junctions with their CuO-plane electrodes oriented perpendicular to supporting substrate

Abstract: We numerically study Joule heating in a THz emitter made of Bi2Sr2CaCu2O8 + δ (Bi2212) single crystal with its CuO planes oriented perpendicular to supporting substrate. The single crystal is glued to the substrate by a layer of PMMA. The electrical current is applied in the c-axis direction across many intrinsic Josephson junctions (IJJ’s) in Bi2212. The calculations show that the internal temperature increases to an acceptable 10–20 K only above the bath temperature for a Joule power density of ∼ 105 W cm −… Show more

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Cited by 15 publications
(8 citation statements)
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“…A crucial point in the physics of the huge IJJ stacks is overheating 3,5,[7][8][9]18,23,26,49,54,56,62,66,67 . For sufficiently low bias currents, the temperature rises only slightly to values above the bath temperature T bath and the voltage across the stack V increases with increasing bias current I.…”
Section: Introductionmentioning
confidence: 99%
“…A crucial point in the physics of the huge IJJ stacks is overheating 3,5,[7][8][9]18,23,26,49,54,56,62,66,67 . For sufficiently low bias currents, the temperature rises only slightly to values above the bath temperature T bath and the voltage across the stack V increases with increasing bias current I.…”
Section: Introductionmentioning
confidence: 99%
“…For the best stacks, an emission power P e in the range of tens of µW has been achieved 17,19,20,32,33 , and arrays of mesas showed emission with P e up to 0.61 mW 19 . The physics of the huge IJJ stacks is affected by Joule heating 1, 3,5,6,8,13,18,22,26,30,49,52,54,55,63 . For sufficiently low bias currents, the temperature rises only slightly to values above the bath temperature T bath and the voltage V across the stack increases with increasing bias current I.…”
Section: Introductionmentioning
confidence: 99%
“…This value was recently improved to 2.4 THz for disk-shaped stacks 33 . In terms of modeling, many calculations of electrodynamics have been based on a homogeneous temperature distribution, while calculations of the thermal properties were based on solving the heat diffusion equations in the absence of Josephson currents 49,52,54 . Some attempts have been made to combine both electrodynamics and thermodynamics, either by using arrays of point-like IJJs 59,60,64 or by incorporating temperature-induced effects into an effective model describing the whole stack as a single "giant" junction 55,62,63 …”
Section: Introductionmentioning
confidence: 99%
“…The physics of the huge IJJ stacks is affected by Joule heating 1, 3,5,6,8,13,18,22,26,30,49,52,54,55,63 . For sufficiently low bias currents, the temperature rises only slightly to values above the bath temperature T bath and the voltage V across the stack increases with increasing bias cur-rent I.…”
Section: Introductionmentioning
confidence: 99%