2017
DOI: 10.1109/led.2017.2675160
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Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays

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Cited by 56 publications
(25 citation statements)
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“…Statistical data for RTN are shown in [320][321][322] and are presented in Figure 38 (left) for different temperatures. Note that the usual exponential distribution of amplitude appears, whose slope is greatly reduced with respect to planar technologies [299,323,324]. This is due not only to the larger cell size, but also to the different doping of the channel and nature of the electron conduction process in the subthreshold region: a uniform conduction over the channel area is expected in 3D cells [325], as opposed to a surface conduction in planar devices.…”
Section: Random Telegraph Noisementioning
confidence: 99%
“…Statistical data for RTN are shown in [320][321][322] and are presented in Figure 38 (left) for different temperatures. Note that the usual exponential distribution of amplitude appears, whose slope is greatly reduced with respect to planar technologies [299,323,324]. This is due not only to the larger cell size, but also to the different doping of the channel and nature of the electron conduction process in the subthreshold region: a uniform conduction over the channel area is expected in 3D cells [325], as opposed to a surface conduction in planar devices.…”
Section: Random Telegraph Noisementioning
confidence: 99%
“…6. The current increase with temperature in the on-state is a typical signature of polysilicon conduction [7,25,26] and is due both to the reduction in trap occupancy and to the enhancement of thermionic emission at the grain boundaries [12]. This effect results in the increase in the Fig.…”
Section: Average Polysilicon Currentmentioning
confidence: 99%
“…The presence of grains separated by highly defective grain boundaries in the polysilicon channel of the strings introduces some relevant issues in the operation and in the reliability of the array. Among them, it is worth mentioning (i) a severe limitation to the string current, especially at low temperature [7]; (ii) transient instabilities in the string current, due to the dependence of the average occupancy of the traps at the grain boundaries on the bias history of the string [8][9][10]; (iii) variability in the cell threshold voltage ( V T ) and in its temperature dependence, due to the haphazardness in the configuration of the polysilicon grains [11,12]; (iv) the worsening of the amplitude statistics of random telegraph noise (RTN) affecting cell V T , due to the contribution to percolative channel conduction of the nonuniform inversion of the intra-grain and inter-grain regions [13][14][15][16][17][18][19]. The adoption of a thin annular channel instead of a full nanowire was demonstrated to be a successful solution to mitigate some of these issues [20,21].…”
Section: Introductionmentioning
confidence: 99%
“…RTN causes Vth instability of 3-D NAND flash memory during two consecutive read operations [34], which originates from the electron capture/release phenomena in memory cell defects of tunneling oxide and poly Si. Figure 9 shows the measured RTN statistics probability density distribution of the 3-D NAND flash memory for different ambient temperatures [15]. RTN not only widens the positive tail above the PV level, but also introduces a negative tail below the PV level [34], which significantly distorts the program Vth distribution.…”
Section: Rtn Effectmentioning
confidence: 99%
“…Despite the several advantages of 3-D NAND flash memory, its reliability degrades with the continued scaling down and introduction of multi-level cell (MLC) and triple-level cell (TLC) NAND flash memory technologies [13,14]. In particular, the transition from 2-D NAND flash memory to 3-D NAND flash memory has been raising many new challenges [15]. 3-D quad-level cell (QLC) NAND flash memory technology is a promising candidate for lower cost per bit and higher-density nonvolatile memory [16,17].…”
Section: Introductionmentioning
confidence: 99%