Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

Huang, Haiyang; Wang, C. S.; Wang, Yeong-Her; Wu, Chia-Jen; Chang, Chin‐Sung

doi:10.1016/s0038-1101(03)00217-x

Cited by 13 publications

(7 citation statements)

References 9 publications

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“…From Fig. 3(c)-(d), in comparison with the previous paper [17], the spectrum is rather similar to that of InPO 4 . This is also confirmed by the values of the O-1s peak energy and energy separations between the main core levels (i.e., Ga-3d, In-3d, and P-2p) in the oxide phases [18].…”

supporting

confidence: 76%

“…As compared to AlGaAs pseudomorphic HEMTs (PHEMTs), InGaPrelated devices have advantages, such as higher band gaps, higher valence-band discontinuity [1], negligible deep-complex (DX) centers [2], excellent etching selectivity between InGaP and GaAs, good thermal stabilities [3][4][5], higher Schottky barrier heights [3], and so on. Particularly, the use of an undoped InGaP insulator takes the advantages of its low DX centers and low reactivity with oxygen [6-10], which may still suffer from the high gate leakage issue.…”

Section: Introductionmentioning

confidence: 99%

“…Electrons can obtain higher energy to generate electron-hole pairs through the enhanced impact ionization, resulting in easy injection of the holes into the gate terminal [23]. However, in InGaP-related devices, it is more difficult for the holes generated by the impact ionization to overcome the valence band discontinuity and to reach the gate [4], so the bell shaped behavior of the impact ionization does not appear in Fig. 6.…”

mentioning

confidence: 99%

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Liquid Phase Oxidation on InGaP and Its Applications

Wang¹,

Lee²

2010

Advances in Solid State Circuit Technologies

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IntroductionHigh-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have attracted many attentions in high speed and power applications due to the superior transport properties. As compared to AlGaAs pseudomorphic HEMTs (PHEMTs), InGaPrelated devices have advantages, such as higher band gaps, higher valence-band discontinuity [1], negligible deep-complex (DX) centers [2], excellent etching selectivity between InGaP and GaAs, good thermal stabilities [3][4][5], higher Schottky barrier heights [3], and so on. Particularly, the use of an undoped InGaP insulator takes the advantages of its low DX centers and low reactivity with oxygen [6-10], which may still suffer from the high gate leakage issue. In order to inhibit the gate leakage issue, increase the power handling capabilities, and improve the breakdown voltages, a metal-oxide-semiconductor (MOS) structure has been widely investigated. However, it is still lacks a reliable native oxide film growing on InGaP, and very few papers have reported on InGaP/InGaAs MOS-PHEMTs. In addition, the MOS-PHEMT not only has the advantages of the MOS structure (e.g., lower leakage current and higher breakdown voltage) but also has the high-density, high-mobility 2DEG channel. Over the past years, a study on the liquid phase oxidation (LPO) of InGaP near room temperature has been done [11][12][13][14]. The application of surface passivation to improve the InGaP/GaAs HBTs' performance has also been first demonstrated [13]. The InGaP/GaAs HBTs with surface passivation by LPO exhibit significant improvement in current gain at low collector current regimes due to the reduction of surface recombination current, as compared to those without surface passivation. Moreover, a larger breakdown voltage and a lower base recombination current are also obtained. In this chapter, the oxide film composition and some issues are addressed. Then a thin InGaP native oxide film prepared by the LPO as the gate dielectric for InGaP/InGaAs MOS-PHEMTs application are discussed, and the comparisons between devices with and without LPO passivation on the InGaP/GaAs HBTs are also reviewed.

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supporting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Liquid Phase Oxidation on InGaP and Its Applications

Wang¹,

Lee²

2010

Advances in Solid State Circuit Technologies

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“…The exceptional performances of InGaP/GaAs based structures can be also used in a variety of electronics and optoelectronics applications, including high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), red emitting VCSEL and tandem solar cell 26 – 29 , at different temperatures. Huang et al .…”

Section: Introductionmentioning

confidence: 99%

“…Huang et al . 26 reported results of temperature dependent DC characteristics, minimum noise figure and associated gain of low noise In 0.49 Ga 0.51 P/In 0.15 Ga 0.85 As/GaAs pseudomorphic heterojunction bipolar transistors (PHEMTs) over the temperature range 300 K to 450 K; whilst Lin et al . 27 studied the stabilities of the dc current gain, ideality factor, and offset voltage against variations in temperature (25–45 °C) and currents for Ga 0.5 In 0.5 P/GaAs heterojunction bipolar transistors (HBTs).…”

Section: Introductionmentioning

confidence: 99%

Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell

Butera

Whitaker

Krysa

et al. 2017

Sci Rep

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This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 μm i-layer) mesa photodiode was illuminated by a standard 206 MBq 55Fe radioisotope X-ray source and characterised over the temperature range −20 °C to 100 °C. The electrical power output of the device reached its maximum value of 1.5 pW at a temperature of −20 °C. An open circuit voltage and a short circuit current of 0.82 V and 2.5 pA, respectively, were obtained at −20 °C. While the electrical power output and the open circuit voltage decreased with increasing temperature, an almost flat trend was found for the short circuit current. The cell conversion efficiency decreased from 2.1% at −20 °C to 0.7% at 100 °C.

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Modulation‐Doped Field‐Effect Transistors (MODFET)

Zhu

Ferreyra

Morkoç̌

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, e.g., a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits, and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms is a very attractive option for the next‐generation high‐speed integrated circuits but faces serious challenges because of the lack of a high‐quality and natural insulator. III‐V Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN based high power HFETs on SiC substrate with 60 nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1∼1.2 Ω·mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in Class AB mode on GaN semi‐insulating substrates, a continuous wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power added efficiency of 40% at 10 GHz. III‐Nitride devices for power switching application has achieved near theoretical limit for vertical devices based GaN native substrates, and breakdown voltage as high as 1200 V and on resistance as low as 9 mΩ‐cm2 for lateral HFET devices on low‐cost silicon substrates. For AlGaN/GaN HFETs on high‐resistivity silicon substrates, promising results were also demonstrated. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In In0.17Al0.83N barrier HFETs. Despite the above‐mentioned encouraging achievements, the degradation mechanisms are still not clear, which requires further investigation. The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in a Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinary p ‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz.

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Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

Abstract: The

Cited by 13 publications

References 9 publications

Liquid Phase Oxidation on InGaP and Its Applications

Liquid Phase Oxidation on InGaP and Its Applications

Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell

Modulation‐Doped Field‐Effect Transistors (MODFET)

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