Temperature Effects on PN Junctions in Piezoelectric Semiconductor Fibers with Thermoelastic and Pyroelectric Couplings

Cheng, Ruoran; Zhang, Chunli; Chen, Weiqiu; Yang, Jiashi

doi:10.1007/s11664-020-08026-9

Cited by 38 publications

(15 citation statements)

References 36 publications

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“…Hence, to solve the photoexcitation physical problem, a numerical iterative method is adopted by using the PDE module in COMSOL Multiphysics software. Here it is worth noting that Guo and Yang obtained the approximate analytical solution of 1-D piezoelectric semiconductors by a perturbation method, and in comparison with the results from COMSOL, it can be applied to verify the reliability and accuracy of our calculation [ 41 , 42 ].…”

Section: Basic Equations For a Gan Nanowire Under Light Irradiationmentioning

confidence: 99%

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties

et al. 2023

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In this paper, we propose a one-dimensional model that combines photoelectricity, piezoelectricity, and photothermal effects. The influence of ultraviolet light on the electromechanical coupling properties of GaN nanowires is investigated. It is shown that, since the ultraviolet photon energy is larger than the forbidden gap of GaN, the physical fields in a GaN nanowire are sensitive to ultraviolet. The light-induced polarization can change the magnitude and direction of a piezoelectric polarization field caused by a mechanical load. Moreover, a large number of photogenerated carriers under photoexcitation enhance the current density, whilst they shield the Schottky barrier and reduce rectifying characteristics. This provides a new theoretical nanoarchitectonics approach for the contactless performance regulation of nano-GaN devices such as photoelectric sensors and ultraviolet detectors, which can further release their great application potential.

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Section: Basic Equations For a Gan Nanowire Under Light Irradiationmentioning

confidence: 99%

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties

et al. 2023

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“…This indicates that compared with a homogeneous junction, the depletion zone in the heterogeneous junction is much easier to be manipulated by external mechanical loading, especially when it possesses a narrower middle part. Such difference is induced by the surface effective polarization charge density ρ s on the interface that origins from the discontinuity of P [11], i.e.,…”

Section: Influence Of the Cross-sectional Area Variation Of Non-unifo...mentioning

confidence: 99%

“…Accompany with that, a new research area called piezotronics and piezophototronics has been formed. Different from the conventional semiconductors, the electric properties of PS devices can be tuned by applied mechanical loading, which is the main effect of piezotronic coupling [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Model and performance analysis of non-uniform piezoelectric semiconductor nanofibers

Fang

Liu

et al. 2022

Applied Mathematical Modelling

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“…That is to say, the homo-structure can serve as a special hetero-structure (quasi-hetero-structure) after some preprocessing. For example, some properties of a hetero-junction appear in a piezoelectric homo-junction with different c-axis directions [32,33]. The present study is motivated by the above works to investigate the electrical responses of a multilayered ZnO beam composed of opposite polarization directions along the length-direction under a transverse end force.…”

Section: Introductionmentioning

confidence: 99%

Interaction between Electromechanical Fields and Carriers in a Multilayered Piezoelectric Semiconductor Beam

2022

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This study discusses the interaction between electromechanical fields and carriers in a multilayered ZnO beam where the c-axis of every two adjacent layers is alternately opposite along the thickness direction. A multi-field coupling model is proposed from the Timoshenko beam theory together with the phenomenological theory of piezoelectric semiconductors, including Gauss’s law and the continuity equation of currents. The analytical solutions are obtained for a bent beam with different numbers of layers. Numerical results show that polarized charges occur at the interfaces between every two adjacent layers due to the opposite electromechanical coupling effects. It was found that a series of alternating potential-barrier/well structures are induced by the polarized charges, which can be used to forbid the passing of low-energy mobile charges. Moreover, it was also observed that the induced polarized charges could weaken the shielding effect of carrier redistribution. These results are useful for the design of piezotronic devices.

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Temperature Effects on PN Junctions in Piezoelectric Semiconductor Fibers with Thermoelastic and Pyroelectric Couplings

Cited by 38 publications

References 36 publications

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties

Model and performance analysis of non-uniform piezoelectric semiconductor nanofibers

Interaction between Electromechanical Fields and Carriers in a Multilayered Piezoelectric Semiconductor Beam

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