Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Abstract

The temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the fabricated Al/p-Si Schottky diodes with the polythiopene-SiO 2 nanocomposite (PTh-SiO 2) interlayer were investigated. The ideality factor of Al/PTh-SiO 2 /p-Si Schottky diodes has decreased with increasing temperature and the barrier height has increased with increasing temperature. The change in the barrier height and ideality factor values with temperature was attributed to inhomogeneties of the zero-bias barrier height. Richardson plot has exhibited curved behaviour due to temperature dependence of barrier height. The activation energy and effective Richardson constant were calculated as 0.16 eV and 1.79 × 10 −8 A cm −2 K −2 from linear part of Richardson plots, respectively. The barrier height values determined from capacitance-voltage-temperature (C-V-T) measurements decrease with increasing temperature on the contrary of barrier height values obtained from I-V-T measurements.

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

“…The current-voltage (I -V ) theory of MS rectifiers serves as the foundation of the physics of semiconductor devices. When an n-type semiconductor is brought into contact with a metal, the work function of the semiconductor should be less than that of the metal for the rectifying contact or Schottky barrier (SB) contact formation [1][2][3][4][5][6][7][8][9][10][11]. The MS contacts have been, in general, used as a gate in MESFETs and as drain and source in MOSFETs [1][2][3][4][5][6].…”

“…When an n-type semiconductor is brought into contact with a metal, the work function of the semiconductor should be less than that of the metal for the rectifying contact or Schottky barrier (SB) contact formation [1][2][3][4][5][6][7][8][9][10][11]. The MS contacts have been, in general, used as a gate in MESFETs and as drain and source in MOSFETs [1][2][3][4][5][6]. Generally, in metal-insulating layer-semiconductor (MIS) device fabrication, plasma etching may cause damage to the Schottky contact region, therefore an insulating or oxide layer deposition on the substrate surface represents an obstacle to damage [4][5][6][7][8][9].…”

“…The MS contacts have been, in general, used as a gate in MESFETs and as drain and source in MOSFETs [1][2][3][4][5][6]. Generally, in metal-insulating layer-semiconductor (MIS) device fabrication, plasma etching may cause damage to the Schottky contact region, therefore an insulating or oxide layer deposition on the substrate surface represents an obstacle to damage [4][5][6][7][8][9].…”

“…The small Schottky BH (SBH) normally results in gate leakage currents which are unacceptably large. The use of an increased barrier diode as the gate can provide an adequate BH for FET operation [4][5][6][7][8][9][10][11][12][13][14].…”

“…The BH modification in the MS rectification contacts can be achieved by means of some experimental methods such as nitridation pretreatment [15,16] or different chemical treatments [17,18] of the semiconductor surface, the deposition of thin interfacial passivation layers [15,16] and formation of an oxide layer by anodic oxidation [19] or thermal oxidation [20] or a sulphide insulating layer by anodic sulphidization [21] on the semiconductor substrate surface; or the thermal annealing of the device after Schottky and ohmic metallization [5][6][7][8][9]. These processes and the interfacial layers play important roles in the formation of the BH.…”