Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

Abstract

We report the temperature effects on the performance of ferroelectric field-effect transistor
(FeFET) based non-volatile memory (NVM) considering random grain phase variation in the ferroelectric layer through simulation. Based on the FE temperature effect model that accounts for both the transistor and ferroelectric degradation, we demonstrate that: 1) at a certain temperature, the memory window (MW) decreases with pronounced effect on low threshold voltage shift and its variation increases as the FE phase decreases; 2) with the temperature increases, the MW decreases with pronounced effect on high threshold voltage shift. The random grain phase variation further exacerbates the MW distribution, thus degrading the sensing margin. These results may provide insights for device design of high-performance FeFET-based NVMs.