Temperature effects on the structural and optical properties of the TlInSe2xS2(1−x) mixed crystals (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:mi mathvariant="bold-italic">x</mml:mi><mml:mo>=</mml:mo><mml:mn>0.3</mml:mn></mml:mrow></mml:math>)

Omar, Ahmad Sahar; Qasrawi, A.F.; Gasanly, Nizami

doi:10.1016/j.jallcom.2017.06.337

Cited by 22 publications

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“…The deformation may be attributed to the morphology that consists of overlapping between well oriented crystallites of CuSe and random ones of MoO 3 at the MoO 3 /CuSe interface . The calculated structural parameters presented by the crystallite size ( D ), microstrain (

\in

), and dislocation density (

δ

) using the previously published equations are also shown in Table . The data suggest nanocrystalline nature of growth with crystallite sizes of ≈9 nm for films deposited onto glass and 12 nm for CuSe films grown onto MoO 3 amorphous substrate.…”

Section: Resultsmentioning

confidence: 99%

Structural and Optoelectronic Properties of MoO₃/CuSe Interfaces

Alharbi

Qasrawi

2019

Physica Status Solidi (a)

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In this article, the authors discuss the growth nature, the structural, optical and dielectric properties of CuSe thin films deposited onto MoO 3 substrate. The films are studied by the X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and ultraviolet-visible light spectroscopy techniques. CuSe thin films are observed to exhibit strained nature of growth when grown onto MoO 3 amorphous substrates. Optically, the MoO 3 /CuSe films are found to exhibit conduction (ΔE c ) and valence (ΔE v ) band offsets of values of 3.70 and 3.42 eV, respectively. In addition, a remarkable increase in the absorbability (R λ ) of MoO 3 by 72 times at 3.0 eV is obtained as a result of coating it with CuSe. The ΔE c , ΔE v , and R λ values are significantly high and nominate the MoO 3 /CuSe interfaces for use in many optoelectronic applications. In addition, the dielectric analysis shows that the MoO 3 /CuSe heterojunction exhibit optical conductivity parameters that make it suitable for use in optical communications. Particularly, the Drude-Lorentz modeling of the imaginary part of the dielectric constant for the MoO 3 /CuSe interfaces displays mobility and plasmon frequency values of 7.76 cm 2 V À1 s À1 and 3.78 GHz, respectively. The obtained plasmon frequency values indicate the applicability of this device in microwave technology.

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