1996
DOI: 10.1007/bf01567116
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Temperature evolution during scanning electron beam processing of silicon

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“…Highly intense electron beams are routinely used to anneal materials. 17 However, beam powers similar to those used in the present study are expected to lead to a temperature increase of the order of only 0.03 K. 13,18 Thus the anisotropy change is not induced by thermal annealing. Similarly we can also rule out interface alloying as a possible mechanism.…”
mentioning
confidence: 62%
“…Highly intense electron beams are routinely used to anneal materials. 17 However, beam powers similar to those used in the present study are expected to lead to a temperature increase of the order of only 0.03 K. 13,18 Thus the anisotropy change is not induced by thermal annealing. Similarly we can also rule out interface alloying as a possible mechanism.…”
mentioning
confidence: 62%