1989
DOI: 10.1016/0921-4534(89)90071-3
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Temperature, field and grain size dependence of flux pinning in high Tc superconductors

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Cited by 25 publications
(5 citation statements)
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“…2, the zero temperature activation energy barrier U, is field dependent. We did not find any simple functional form for this dependence and the best approximation is U,l/n which, for the moment, does not appear to be related by a simple way to traditional pinning models [16].…”
mentioning
confidence: 60%
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“…2, the zero temperature activation energy barrier U, is field dependent. We did not find any simple functional form for this dependence and the best approximation is U,l/n which, for the moment, does not appear to be related by a simple way to traditional pinning models [16].…”
mentioning
confidence: 60%
“…For instance, if we write U(H, T) = Uo(H)(l -T/T,>n the resulting U is given by which reduces to = Uo(H) for n = 1. The n = 1 power law has received many recent experimental supports from resistivity measurements as well in YBa&usOi singl6crystal [161 as in films [13,16] and YBCO/P,BCO superlattices [13], where the shoulder on the resistivity below T, under magnetic field has been shown to originate from thermally activated flux motion [17]. As we have shown in a recent paper [HI, the shielding as reflected by x' and by XI' peak correspond to the resistivity reaching this shoulder level (p/pn -+ and in our case the relationship Dlf= cr12 reduces to Thus the slope of the Arrhenius plot of lnf gives us the zero temperature activation energy barrier and the prefactor Info = lnf, + Uo(H)/T,.…”
mentioning
confidence: 99%
“…Coherence length (ξ ) and penetration depth (λ) values at the absolute zero temperature are obtained from the upper critical magnetic field and irreversibility field values, respectively. Moreover, activation energy values of the film are calculated using line pinning model and making linear fits to the low resistivity part of the transition [50][51][52][53].…”
Section: Methodsmentioning
confidence: 99%
“…More accurate values of U 0 can be obtained from transport rather than magnetic measurements due to the widening of the transition. The calculation of U 0 was made here by using the line pinning model [15] where U 0 was approximated from resistivity measurements [16,17] via an Arrheniustype method. With the assumption that the resistivity ρ has the following dependence…”
Section: Pinning Force and Activation Energymentioning
confidence: 99%