Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)

Abstract

This study analyzes the effects of temperature on transfer characteristics, threshold voltage, ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS) in N-Channel Gallium Phosphide (GaP) Fin Fied Effect Transistor (FinFET). GaP-FinFET's temperature properties have been studied using the (MuGFET) simulation tool. Because of the lower ION/IOFF ratio, higher DIBL, and higher SS at higher temperatures, the results show a detrimental impact of increased working temperature on the use of GaP-FinFET in electronic circuits, such as digital circuits and amplifier circuits. Furthermore, the best situation for using a transistor as a temperature nano-sensor is when it is in the ON state.