Temperature-independence-point properties for 0.1 μm-scale pocket-implant technologies and the impact on circuit design

Hisamitsu, K.; Ueno, H.; Tanaka, M.; Kitamaru, D.; Miura-Mattausch, M.; Mattausch, H.J.; Kumashiro, S.; Yamaguchi, T.; Yamashita, K.; Nakayama, N.

doi:10.1109/aspdac.2003.1195013

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“…An interesting phenomenon is that for MOS transistors there exists a cross-over point where the current is insensitive to temperature variation. [7][8][9][10][11] As shown in Fig. 1.1, the drain current versus gate voltage characteristics of an n-channel MOS transistor show up a TIP at a particular value of gate voltage.…”

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confidence: 99%

Introduction to the History of Semiconductors

Lau¹

2017

ULSI Front-End Technology

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mentioning

confidence: 99%

Introduction to the History of Semiconductors

Lau¹

2017

ULSI Front-End Technology

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Temperature- and Voltage-Aware Timing Analysis

Lasbouygues

Wilson

Azémard

et al. 2007

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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In the nanometer era, the physical verification of CMOS digital circuit becomes a complex task. Designers must account of new factors that impose a significant change in validation methods. One of these major changes in timing verification to handle process variation lies in the progressive development of statistical static timing engines. However the statistical approach cannot capture accurately the deterministic variations of both the voltage and temperature variations. Therefore, we define a novel method, based on non-linear derating coefficients, to account of these environmental variations. Based on temperature and voltage drop CAD tool reports, this method allows computing the delay of logical paths considering more realistic operating conditions for each cell. Application is given to the analysis of voltage drop effects on timings.

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Temperature-independence-point properties for 0.1 μm-scale pocket-implant technologies and the impact on circuit design

Cited by 2 publications

References 7 publications

Introduction to the History of Semiconductors

Introduction to the History of Semiconductors

Temperature- and Voltage-Aware Timing Analysis

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