2020
DOI: 10.1103/physrevlett.124.236601
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Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe

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Cited by 45 publications
(31 citation statements)
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“…Temperature-induced Lifshitz transitions are also observed in other TSMs, for example, MTe 5 (M = Zr, Hf) 26 , 27 , InTe 1-δ 28 , ZrSiSe 29 , WTe 2 30 , and TaIrTe 4 31 . Anomalies in both longitudinal resistivity and Hall resistivity/coefficient can be found in MTe 5 (M = Zr, Hf) 26 , 27 , InTe 1-δ 28 , and ZrSiSe 29 , but not in WTe 2 30 and TaIrTe 4 31 . Since we have observed the change of Hall resistivity in EuAs 3 (Fig.…”
Section: Discussionmentioning
confidence: 86%
“…Temperature-induced Lifshitz transitions are also observed in other TSMs, for example, MTe 5 (M = Zr, Hf) 26 , 27 , InTe 1-δ 28 , ZrSiSe 29 , WTe 2 30 , and TaIrTe 4 31 . Anomalies in both longitudinal resistivity and Hall resistivity/coefficient can be found in MTe 5 (M = Zr, Hf) 26 , 27 , InTe 1-δ 28 , and ZrSiSe 29 , but not in WTe 2 30 and TaIrTe 4 31 . Since we have observed the change of Hall resistivity in EuAs 3 (Fig.…”
Section: Discussionmentioning
confidence: 86%
“…On the other hand, based on the consistent picture provided by the shifts, the (T 1 T ) −1 , and linewidth it is clear that μ(T ) has a large T -dependence and crosses the protected node at low T . In Zr-SiSe, transport results were recently proposed to give evidence for even larger T -induced changes of μ [15]. For the present case, we assume relative shifts of band energies contribute to this process causing the node to shift relative to μ, perhaps induced by the promotion of carriers from donor states, in a manner akin to the changes that have been proposed [17] to accompany the optical promotion of carriers in ZrSiTe.…”
mentioning
confidence: 70%
“…Its large region of topologically protected drumhead surface states [13] as well as very large spin Berry curvature and associated spin Hall and Nernst response [14] suggest spintronic and related applications. Suggested changes of Fermi surface topology in this family include a temperature-induced Lifshitz transition in ZrSiSe [15], and a pressure-induced Lifshitz transition in ZrSiTe [16] as well as indications of a photoinduced phonon driven transformation [17].…”
mentioning
confidence: 99%
“…Topologically protected surface states were observed in ZrSiSe, linking with bulk bands together . These features are close to achieving a Lifshitz transition via adjusting some external parameters, such as temperature . In addition, a spin–orbit coupling (SOC) gap (20–60 meV) was predicted, which can destroy the nodal-line structure. , These fascinating properties motivate us to further investigate the isostructural ZrSiX compounds.…”
Section: Introductionmentioning
confidence: 83%