2019
DOI: 10.1039/c8tc06587j
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Temperature-induced transport changes in molecular junctions based on a spin crossover complex

Abstract: This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2B(pz)2)2(phen)] as an active switchable thin film.

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Cited by 32 publications
(45 citation statements)
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“…S4 and S5 show another 2 sets of data). Figure 4C shows the corresponding evolution of the values of J at -1.0 and +1.0 V. The observed difference in the width and the position of the hysteresis under positive and negative bias polarity is most likely due to mall conformational differences of the SCO complex similar to observations made by Miyamachi et al 15 and Poggini et al 4 Moreover, from these data we make the following 3 observations. 1) The value of J changes by one order of magnitude with T. This large switch in the observed current proves that Fe III complexes can perform Please do not adjust margins Please do not adjust margins similarly well as Fe II complexes and the transition from HSLS does not preclude efficient current switching in molecular junctions.…”
Section: Please Do Not Adjust Marginssupporting
confidence: 80%
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“…S4 and S5 show another 2 sets of data). Figure 4C shows the corresponding evolution of the values of J at -1.0 and +1.0 V. The observed difference in the width and the position of the hysteresis under positive and negative bias polarity is most likely due to mall conformational differences of the SCO complex similar to observations made by Miyamachi et al 15 and Poggini et al 4 Moreover, from these data we make the following 3 observations. 1) The value of J changes by one order of magnitude with T. This large switch in the observed current proves that Fe III complexes can perform Please do not adjust margins Please do not adjust margins similarly well as Fe II complexes and the transition from HSLS does not preclude efficient current switching in molecular junctions.…”
Section: Please Do Not Adjust Marginssupporting
confidence: 80%
“…[1][2][3] Given that switching can be triggered by various external stimuli, such as, temperature, pressure, light, or adsorption of guest molecules, SCO molecules also find applications as smart materials that respond to several stimuli. Devices based on thin films [4][5][6][7] (with a thickness of typically 10 -100 nm) of SCO molecules exhibit spin-polarized current switching, 8 voltage-bias, 9 and stretching 10 induced resistance switching, and memristive properties, 11 but it is still challenging, however, to incorporate SCO molecules in molecular tunnel junctions as they are prone to decomposition, or conformational distortion, such that they lose their SCO properties. 4,5,8 In addition, the moleculeelectrode coupling has to be optimized because too strong molecule-electrode coupling leads to drastic alteration of their magnetic properties, even a complete loss of SCO behaviour, [12][13][14] yet too weak coupling compromises stability of the devices.…”
Section: Introductionmentioning
confidence: 99%
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“…In particular the possibility of obtaining bistable thin films of Fe(II) SCO complexes has been suggested in several recent reports. [19][20][21][22][23][24][25] Most of these studies highlighted that direct surface-adsorbate interactions can significantly modify the thermodynamics of SCO. While HOPG (Highly Oriented Pyrolytic Graphite) supported SCO systems were reported to preserve its switching capability similarly to bulk, 23,26 sub-monolayer deposits of several Fe(II) complexes show a selective stabilization of one of the spin states in detriment of the others and loss of their original SCO behaviour when evaporated on metallic surfaces.…”
Section: Introductionmentioning
confidence: 99%