Temperature Induction of a resonant state and transition semiconductor-Semimetal in Bands Structure and Electronic Transport in HgTe/CdTe Nanostructure Superlattice

Metal-to-Semimetal Transition in Platinum Nanotubes: Dependence on Thickness

“…%)-In alloys, 26 VO 2 , 27,28 WSe 2 powders, 29 multilayered MoS 2 , 30 and HgTe/CdTe thin films. 31,32 For example, critical thicknesses (28 nm) for Bi thin films and ∼63 nm for single-crystalline Bi nanowires have been reported, as shown in Table 1.…”

“…In addition, the critical thickness in a specific temperature or pressure range has been shown to affect the transition behavior from metal to semimetal or semiconductor owing to electron confinement effects, as reported for Bi thin films, single-crystalline Bi nanowires, Bi (4 at. %)-In alloys, VO 2 , , WSe 2 powders, multilayered MoS 2 , and HgTe/CdTe thin films. , For example, critical thicknesses (28 nm) for Bi thin films and ∼63 nm for single-crystalline Bi nanowires have been reported, as shown in Table .…”