Temperature-insensitive photoluminescence above 300 K in strained GaxIn1 − x As multiple quantum wire heterostructures

Wohlert, D. E.; Chou, S. G.; Cheng, K. Y.

doi:10.1016/s0022-0248(96)01032-9

Cited by 10 publications

(11 citation statements)

References 9 publications

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“…1 are only approximate due to limitations in the tip radius used during AFM. 16 Figure 2 shows the normalized PL spectra taken at 77 K of a QD sample where 3.6 monolayers of InAs is deposited on a homogenous surface, and two samples where 3.6 and 6.0 monolayers of InAs is deposited on a surface with a lateral composition modulation. Nevertheless, Fig.…”

Section: Resultsmentioning

confidence: 99%

Improved size uniformity of InAs quantum dots grown on a lateral composition modulated InGaAs surface

Wohlert

Cheng

Chang

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Resultsmentioning

confidence: 99%

Improved size uniformity of InAs quantum dots grown on a lateral composition modulated InGaAs surface

Wohlert

Cheng

Chang

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…6 In general, the samples used for this study have a 1200 Å buffer layer of Al 0.48 In 0.52 As and a 1200 Å Al 0.24 Ga 0.24 In 0.52 As cladding layer. Specifically, high purity elemental Ga, In, and Al were utilized as the group III flux.…”

Section: Methodsmentioning

confidence: 99%

“…The next logical step would be to use quantum wires ͑QWRs͒ in the active region. In either case, the peak PL tends to converge near ϳ1.61 m starting at 250 K and typically does not shift significantly for another 130 K. 6 This is not only physically interesting, but this effect may prove useful if QWRs displaying these characteristics are included in the design of a laser in an effort to stabilize the lasing wavelength against temperature changes without the use of gratings or thermoelectric coolers. A partial listing of the techniques used to achieve this are reviewed by Kapon.…”

Section: Introductionmentioning

confidence: 96%

“…This has met with great success in the case of quantum well ͑QW͒ lasers due to their ease of fabrication. 5,6 Some strained Ga x In 1Ϫx As QWR heterostructures grown by the SILO process display net invariant peak wavelengths over a temperature range from 77 to 380 K. Other structures blue shift with increasing temperature, i.e., the 77 K peak wavelength is longer than the 300 K peak wavelength. Technologically, this is a much more formidable task than it is with QWs because the alloy composition must vary on the order of 100 Å in not only the growth direction, but in the growth plane itself.…”

Section: Introductionmentioning

confidence: 99%

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Temperature stabilized 1.55 μm photoluminescence in strained GaxIn1−xAs quantum wire heterostructures

Wohlert

Moy

Chou

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inStrong charge carrier confinement in purely strain induced Ga As ∕ In Al As single quantum wires Appl. Phys. Lett. 85, 3672 (2004); 10.1063/1.1807948High thermal stability of photoluminescence in a disordered quantum wire superlattice Laser operation at room temperature of self-organized In 0.1 Ga 0.9 As/(GaAs) 6 (AlAs) 1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy Growth optimization of Ga x In 1−x As y P 1−y / GaAs(0.98 μm) quantum wire heterostructures We present two techniques for manipulating the peak photoluminescence wavelength towards ϳ1.55 m, from the usual 1.61 m, of strained Ga x In 1Ϫx As quantum wire ͑QWR͒ heterostructures. The QWR samples have been prepared by the strain-induced lateral-layer ordering process during molecular beam epitaxy utilizing short-period superlattices of (GaAs) m /(InAs) n . The subscripts m and n refer to the number of deposited monolayers of GaAs and InAs, respectively. In the first approach, for some cases of mϾn, the QWRs will contain more Ga thereby decreasing the 300 K wavelength towards 1.55 m provided the strain is not too great. The second approach relies on post-growth annealing to shift the 300 K peak emission. For anneals performed at 650°C for 3-5 h, 300 K wavelengths from 1.55 to 1.59 m have been attained. Moreover, all of these samples display a unique behavior of peak PL with respect to temperature. Some samples show no net shift in wavelength over a range of 77-380 K. Other samples have 77 K wavelengths longer than their 300 K wavelengths. It is believed that these structures have the potential to be processed into temperature stabilized Fabry-Pérot lasers emitting at 1.55 m.

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“…The k · p model is the most popular one for treating electronic structures of semiconductor quantum wells or superlattices. However, when applied to complex structures such as self-assembled quantum wires [4][5][6][7][8][9] or quantum dots [13,18,19], the method becomes very cumbersome if one wish to implement the correct boundary conditions that take into account the differences in k · p band parameters for different materials involved. EBOM is free of this problem, since different material parameters are used at different atomic sites in a natural way.…”

Section: Theoretical Approachmentioning

confidence: 99%

Systematic study of Ga1−xInxAs self-assembled quantum wires with varying interfacial strain relaxation

Sun

Chang

2001

Journal of Applied Physics

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A systematic theoretical study of the electronic and optical properties of Ga 1−x In x As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model.Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties.It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

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Temperature-insensitive photoluminescence above 300 K in strained GaxIn1 − x As multiple quantum wire heterostructures

Cited by 10 publications

References 9 publications

Improved size uniformity of InAs quantum dots grown on a lateral composition modulated InGaAs surface

Improved size uniformity of InAs quantum dots grown on a lateral composition modulated InGaAs surface

Temperature stabilized 1.55 μm photoluminescence in strained GaxIn1−xAs quantum wire heterostructures

Systematic study of Ga1−xInxAs self-assembled quantum wires with varying interfacial strain relaxation

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