Temperature‐mediated excitation of defect modes in a periodic structure at terahertz frequencies

Abstract

The dependence on temperature of a defect mode of a periodic dielectric multilayer is studied in the terahertz range by using the characteristic matrix method. The structure analyzed is composed of alternating layers of silica and polymethylpentene. The material of the defect is the indium antimonide (InSb), which has a permittivity that is temperature dependent causing a blueshift of the defect mode as the temperature rises. Although at terahertz frequencies, the InSb is a dissipative material, choosing appropriately the thickness of the defect results in a defect mode with a transmittance that, throughout the range explored, always remains above 0.9 with a maximum of 0.9914.

In situ thermal characterisation and filamentary modification in Polymethylpentene

“…This polymer can be employed to produce optical elements via injection extrusion because of its thermoplastic properties, which are suitable for large-scale production. The optical and electronic properties of PMP are attractive to various industries; therefore, this polymer has been used in many important applications [1][2][3][4][5]. For example, this polymer possesses a wide transmission band from the ultraviolet (UV) to the midinfrared region (MIR), and even this material has a transmission window in the far infrared region (FIR) [6].…”

Broadband reflectors with a disordered layered structure: statistical properties of high performing configurations selected via genetic algorithm

“…They can be used both at optical and lower frequencies for various purposes. Filtering devices [2][3][4][5], high reflective [6][7][8][9] and low reflective coatings [10], field concentrators [11,12] can be realized by using dielectric multilayers.…”