Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes

Sanayeh, Marwan Bou; Brick, P.; Schmid, W.; Mayer, Bernd; Mûller, Martín; Reufer, M.; Streubel, K.; Tomm, Jens W.; Bacher, G.

doi:10.1063/1.2760143

Cited by 28 publications

(16 citation statements)

References 9 publications

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“…In this respect, a slow current sweep is equivalent to a cw experiment. Figure 4a shows the results of such measurements for a homogeneous set of red-emitting devices as reported by BouSanayeh [73]. The abrupt power fall-offs which are marked by arrows, clearly point to the COD thresholds P COD .…”

Section: Cod Threshold In Cw Operationmentioning

confidence: 96%

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Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Cod Threshold In Cw Operationmentioning

confidence: 96%

“…At a heat-sink temperature of 40°C, one observes the so-called thermal rollover instead of COD. This behavior illustrates that the critical facet temperature [73,74], i. e., T facet = T bulk +ΔT :…”

Section: Cod Threshold In Cw Operationmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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“…2b it is worthwhile noticed that the temperature of COD seeds has a sudden increase of about 32 K at the time of 2.583 s corresponding to the injection current of 2.6 A. A critical facet temperature and a high photon flux can be regarded as the key precondition for the occurrence of COD [4,19], and their results indicated that the COD process of cw-operating high-power LDs is due to a thermal runaway process. Following the COD occurrence the crystal restructure damage is produced in the output facet and then propagates into the cavity, which was so-called dark line defect (DLD) [20].…”

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confidence: 97%

“…The threshold current densities and slope efficiencies is 0. 19 In our experiments, the temperature distribution images of the entire output facet of the LDs were obtained from an FLIR System SC5700 camera working in the 3.7-4.8 mm range images with a temperature resolution of 20 mK. The thermal infrared camera recorded the images with a frequency of 115 Hz (1 ms integration time, 7.6 ms dead time) and a spatial resolution of about 3.0 mm per pixel.…”

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confidence: 99%

Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

Qiao

Feng

Cong

et al. 2013

Phys. Status Solidi A

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The transient thermal characteristics related to catastrophic optical damage (COD) in high power AlGaAs/GaAs laser diodes (LDs) are studied experimentally by means of thermal infrared imaging, laser scanning confocal microscopy, and transient thermal technique. The transient thermal technique is based on the diode forward voltage method in which the structure function theory is applied to determine the component thermal resistance and temperature rise of the LDs. We have recorded the dynamics of COD process using thermal infrared camera. Two melting spots are observed in the output facet after COD which location exactly matches the position of the thermal flash from the thermal imaging and even the temperature of COD seed has a sudden increase of 32 K when the COD event occurs. Furthermore, we find that the thermal resistance from chip to In solder increases remarkably after COD, meanwhile the thermal resistance of solder and package does not change apparently. The results are attributed to the heat power dissipation increase originating from the enhancement of nonradiative recombination after COD under constant input electrical power.

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“…The actual limiting event can take one of a number of forms such as catastrophic optical damage [3][4][5] or spatial hole burning [6][7][8]. The general approach to raising these limits is to design a heterostructure which effectively confines high power in the lasing mode while maintaining low internal optical intensities.…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode

Chan¹,

Son²,

Kim³

et al. 2011

Journal of the Optical Society of Korea

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Quantum dots were designed within a GRIN-SCH(Graded index -Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

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Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes

Cited by 28 publications

References 9 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode

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