Temperature Stability of Dynamic-Threshold Mode SiGe p-Metal–Oxide–Semiconductor Field Effect Transistors

Abstract

In this study, we have systematically investigated the thermal stability of strained silicon–germanium (SiGe) and bulk Si p-metal–oxide–semiconductor field-effect transistors (MOSFETs) in dynamic-threshold (DT) mode and standard mode operation, respectively, from 77 to 400 K. Possessing advantages of good carrier confinement and higher carrier mobility in the strained-SiGe material, SiGe DT-MOSFETs exhibit not only enhanced drive current but also better thermal stability for threshold voltage, substrate sensitivity, and low-frequency noise over the entire operating temperature range than their counterpart Si devices. That is very important for radio-frequency micropower analogue and digital integrated circuits applications.