Temperature variation of optical energy gap values of the compound CuGaTe2

Rivero, A.; Quintero, M.; Power, Ch.; González, J.; Tovar, R.; Ruíz, J.

doi:10.1007/s11664-997-0062-3

Cited by 13 publications

(6 citation statements)

References 19 publications

(32 reference statements)

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“…However, for Cu 2 ZnGeTe 4 the calculated

Δ E_{normalG}^{G G A}

≈ 0.99 eV is also underestimated as was obtained by using for CuGaTe 2 the value

E_{normalG}^{normalexp}

= 1.23 eV . A more reliable value of

Δ E_{normalG}^{G G A}

for Cu 2 ZnGeTe 4 (

Δ E_{normalG}^{G G A}

≈ 1.20 eV) is calculated by taken

E_{normalG}^{normalexp}

≈ 1.40 eV for the band gap of CuGaTe 2 , a value which has been recently obtained for high quality crystals of this material by photoluminescence and optical absorption measurements . Thus, using

Δ {normalE}_{normalG}^{G G A}

≈ 1.20 eV,

E_{normalG}^{t h}

= (1.22 ± 0.15) eV is obtained for KS‐Cu 2 ZnGeTe 4 , which is in reasonable agreement with

E_{normalG}^{normalexp}

≈ 1.49 eV obtained in the present work.…”

Section: Resultsmentioning

confidence: 65%

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Nieves

Delgado

Marcano

et al. 2016

Physica Status Solidi (b)

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A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu 2 ZnGeTe 4 quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm À1 have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm À1 tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this hightemperature modification of ZnTe and Cu 2 GeTe 3 secondary phases has been detected by both XRD and Raman spectroscopy.

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“…However, for Cu 2 ZnGeTe 4 the calculated

Δ E_{normalG}^{G G A}

≈ 0.99 eV is also underestimated as was obtained by using for CuGaTe 2 the value

E_{normalG}^{normalexp}

= 1.23 eV . A more reliable value of

Δ E_{normalG}^{G G A}

for Cu 2 ZnGeTe 4 (

Δ E_{normalG}^{G G A}

≈ 1.20 eV) is calculated by taken

E_{normalG}^{normalexp}

≈ 1.40 eV for the band gap of CuGaTe 2 , a value which has been recently obtained for high quality crystals of this material by photoluminescence and optical absorption measurements . Thus, using

Δ {normalE}_{normalG}^{G G A}

≈ 1.20 eV,

E_{normalG}^{t h}

= (1.22 ± 0.15) eV is obtained for KS‐Cu 2 ZnGeTe 4 , which is in reasonable agreement with

E_{normalG}^{normalexp}

≈ 1.49 eV obtained in the present work.…”

Section: Resultsmentioning

confidence: 65%

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Nieves

Delgado

Marcano

et al. 2016

Physica Status Solidi (b)

Self Cite

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“…Therefore, even basic parameters of CGT, such as the band-gap energy (E g ) and its temperature dependence in CGT, were not correctly measured until recently. 1 The same was true with the lowtemperature photoluminescence ͑PL͒ properties of CGT crystals. The first detailed study was only recently published by Krustok et al 2 In Ref.…”

Section: ͓S0021-8979͑99͒03221-1͔mentioning

confidence: 79%

Photoluminescence study of deep levels in CuGaTe2 crystals

Krustok

Raudoja

Yakushev

et al. 1999

Journal of Applied Physics

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A deep photoluminscence band at 0.95 eV was studied in CuGaTe2 crystals. The shape of this band did not change with laser power and no j shift was detected. This band shifts towards higher energy with increasing temperature and its shape becomes more asymmetric. The activation energy of this band was ET=0.20 eV as measured with thermal quenching. The possible association of the 0.95 eV band with grain boundaries or dislocations is discussed.

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“…Figure 11 compiles our new data obtained for CuGaS 2 and compares them with literature data for CuGaSe 2 and CuGaTe 2 . 53,54 The temperature dependence of the exciton energies of all CuGaX 2 chalcopyrites shown in Fig. 11 was initially analyzed by fitting a single Bose-Einstein frequency according to…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of band gaps in semiconductors: Electron-phonon interaction

et al. 2012

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We have theoretically investigated, by ab initio techniques, the phonon properties of several semiconductors with chalcopyrite structure. Comparison with experiments has led us to distinguish between materials with d electrons in the valence band (e.g., CuGaS 2 , AgGaS 2 ) and those without d electrons (e.g., ZnSnAs 2 ). The former exhibit a rather peculiar nonmonotonic temperature dependence of the energy gap which, so far, has resisted cogent theoretical description. We analyze this nonmonotonic temperature dependence by fitting two Bose-Einstein oscillators with weights of opposite sign leading to an increase at low temperatures and a decrease at higher temperatures and find that the energy of the former correlates well with characteristic peaks in the phonon density of states associated with low-energy vibrations of the d-electron elements. We hope that this work will encourage theoretical investigations of the electron-phonon interaction in this direction, especially of the current ab initio type.

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Temperature variation of optical energy gap values of the compound CuGaTe2

Cited by 13 publications

References 19 publications

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Photoluminescence study of deep levels in CuGaTe2 crystals

Temperature dependence of band gaps in semiconductors: Electron-phonon interaction

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Temperature variation of optical energy gap values of the compound CuGaTe2

Cited by 13 publications

References 19 publications

Structural characterization of the high‐temperature modification of the Cu2ZnGeTe4 quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu2ZnGeTe4 quaternary semiconductor compound

Photoluminescence study of deep levels in CuGaTe2 crystals

Temperature dependence of band gaps in semiconductors: Electron-phonon interaction

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Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound