2023
DOI: 10.1016/j.jallcom.2023.170999
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Templet-free one-pot synthesis of Bi-doped ZnTe nanoflowers by cation exchange method for optoelectronic applications and antibacterial activity

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Cited by 14 publications
(7 citation statements)
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“…Additionally, the observed E g is over the IR region with the orange-red emission range, which will be beneficial for IR optics-related applications. 17,33 The estimated ‘ E g ’ value tabulated in Table 2 shows a decreasing pattern from 1.38 eV to 1.29 eV as the Bi content increases, as shown in Fig. 6(b).…”
Section: Resultsmentioning
confidence: 86%
See 1 more Smart Citation
“…Additionally, the observed E g is over the IR region with the orange-red emission range, which will be beneficial for IR optics-related applications. 17,33 The estimated ‘ E g ’ value tabulated in Table 2 shows a decreasing pattern from 1.38 eV to 1.29 eV as the Bi content increases, as shown in Fig. 6(b).…”
Section: Resultsmentioning
confidence: 86%
“…16 The introduction of Bi dopants into ZnTe nanosheets demonstrated effectiveness for biological applications via displaying efficient antibacterial activity against pathogenic bacteria including Staphylococcus aureus and Pseudomonas aeruginosa . 17 Another notable outcome was observed with Bi alloying in a Se–Te nanocomposite, leading to enhanced thermal conductivity and a reduction in the Seebeck coefficient. The doped sample is a superior thermoelectric material to the undoped counterpart.…”
Section: Introductionmentioning
confidence: 98%
“…Furthermore, the absorption coefficient and optical bandgap values E g are related by using the Tauc relation. The Tauc relation for a direct bandgap material is given by 47 αhv = B ( hv − E g ) p where B presents a constant known as the Tauc parameter. It depends on the transition probability and deliberates the degree of disorder in the system, h is the Planck constant, ν is the incident photon's frequency, E g is the optical bandgap, and p represents the kind of electronic transition that takes place during the absorption between the valence and conduction bands and is numerically equal to ½, 3/2, 2 or 3 for direct allowed, direct forbidden, indirect allowed or indirect forbidden transitions, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…All the microstructural parameters are calculated and presented in Table 1. The average crystallite size of the CuZnSe sample was determined by using Scherrer's equation as follows, [47,48] Crystallitesize(normalD)=kλβcosθ $\vcenter{\openup.5em\halign{$\displaystyle{#}$\cr {\rm Crystallite}\ {\rm size}\ ({\rm D})={{k\lambda }\over{\beta cos\theta }}\hfill\cr}}$ …”
Section: Resultsmentioning
confidence: 99%
“…All the microstructural parameters are calculated and presented in Table 1. The average crystallite size of the CuZnSe sample was determined by using Scherrer's equation as follows, [47,48] Crystallite size ðDÞ ¼ kl bcosq…”
Section: Structural Analysis: Xrd Ftir and Ramanmentioning
confidence: 99%