Abstract-Dark resistivity and electrooptic effect are two of the necessary conditions crucial for the photorefractive effect to occur. Proton implantation used for increasing the dark resistivity of semiconductor heterostructures can influence the electrooptic coefficient. In this paper, there are presented the results of absorption and electroabsorption spectra measurements in semi-insulating GaAs/Al0.3Ga0.7As multiple quantum well (MQW) structures. The dependence was analyzed between the electroabsorption amplitude near the excitonic peaks and the different proton implantation parameters.Semi-insulating multiple quantum wells (SIMQW) comprise a special class of photorefractive materials as they have very high sensitivity and short response time. The highest photorefractive response is observed for the photon energies close to exciton transitions [1][2]. Due to the strong absorption near the excitonic resonance, SIMQW samples are usually designed as thin films.Due to their unique properties, photorefractive multiple quantum well structures can find a broad range of applications from dynamic holography and optical signal processing to generation and transmission of solitons [3][4][5][6][7]. Low temperature grown MQWs can be used in ultra-fast communication systems as detectors and emitters [2].The semiconductor MQW structure needs to possess certain material properties to be photorefractive. One of the requirements is relatively high dark resistivity. Conventionally MBE (molecular beam epitaxy) or MOCVD (metal-organic chemical vapor deposition) grown structures do not fulfill this requirement. They always possess a certain amount of impurities acting as shallow dopants and increasing the conductivity of the material.One of the most common techniques to ensure semiinsulating properties is proton implantation which creates the traps compensating residual shallow dopants. It is not the only one available type of ion implantation but it presents several advantages over the other types. For example, protons as the lightest ions have the biggest possible penetration depth and can be used on relatively thick structures.Another method is epitaxial growth at low substrate temperatures. Such LTG (low temperature growth) * E-mail: eliza.miskiewicz@zut.edu.pl photorefractive MQWs have some interesting properties such as ultra-short carrier trapping time [2].One of the most popular multiple quantum well systems is the GaAs/AlGaAs MQW structure operating in Franz-Keldysh geometry, with an external electric field applied along the layers of quantum wells [1-2], [8][9]. In this setup the high intensity electric field ionises the excitons and shortens their lifetime. This phenomenon manifests itself in the absorption spectrum as broadening and decreasing of peaks corresponding to excitonic transitions and is thus called electroabsorption [8].The main aim of the present study was to examine the influence of proton implantation (used for increasing the dark resistivity) on the absorption and electroabsorption spectra of GaAs/AlGaA...