2012
DOI: 10.1088/2040-8978/14/3/035202
|View full text |Cite
|
Sign up to set email alerts
|

Temporal analysis of solitons in photorefractive semiconductors

Abstract: Temporal analysis of both the photorefractive mechanism and soliton propagation in a slab semiconductor waveguide is presented. As an example, a structure based on GaAs/AlGaAs MQWs was investigated. Both a numerical and simple analytical approach based on the bipolar band-transport model is used to derive a temporal photorefractive response on localized illumination. The corresponding propagation problem describing the evolution of screening soliton profiles in media with quadratic electro-optic effect was als… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
11
0

Year Published

2012
2012
2023
2023

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 19 publications
(11 citation statements)
references
References 27 publications
0
11
0
Order By: Relevance
“…This is due to the proton implantation used in semi-insulating MQW process technology [2,7] as well as field-enhanced deeplevel-defect capture-cross-section [8] which can result in the dependence  = (E). A more detailed knowledge of the described parameter values is important in planning the applications of PR semiconductors with mixed conductivity and nonlinear transport, particularly for devices in which the light propagates over longer distances [9]. This work has been partially supported by the National Center for Science under the Project awarded by decision number DEC-2011/01/B/ST7/06234.…”
Section: CMmentioning
confidence: 99%
“…This is due to the proton implantation used in semi-insulating MQW process technology [2,7] as well as field-enhanced deeplevel-defect capture-cross-section [8] which can result in the dependence  = (E). A more detailed knowledge of the described parameter values is important in planning the applications of PR semiconductors with mixed conductivity and nonlinear transport, particularly for devices in which the light propagates over longer distances [9]. This work has been partially supported by the National Center for Science under the Project awarded by decision number DEC-2011/01/B/ST7/06234.…”
Section: CMmentioning
confidence: 99%
“…The highest photorefractive response is observed for the photon energies close to exciton transitions [1][2]. Due to the strong absorption near the excitonic resonance, SIMQW samples are usually designed as thin films.Due to their unique properties, photorefractive multiple quantum well structures can find a broad range of applications from dynamic holography and optical signal processing to generation and transmission of solitons [3][4][5][6][7]. Low temperature grown MQWs can be used in ultra-fast communication systems as detectors and emitters [2].…”
mentioning
confidence: 99%
“…Due to their unique properties, photorefractive multiple quantum well structures can find a broad range of applications from dynamic holography and optical signal processing to generation and transmission of solitons [3][4][5][6][7]. Low temperature grown MQWs can be used in ultra-fast communication systems as detectors and emitters [2].…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…For optical signals of frequency detuned from the resonance absorption can be significantly reduced and PMQW structure can be used as a guiding layer of a planar waveguide [3]. Such geometry gives a lot of new possibilities including generation of screening solitons [4,5] and different interactions between resonant external beams and off-resonant guided signals. For example, the photorefractive grating created by two external beams in a TWM experiment can influence the signal propagating in a PMQW waveguide leading to frequency selective reflection, deflection or outcoupling [6].…”
mentioning
confidence: 99%