2008
DOI: 10.1021/jp8036457
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Temporal- and Site-Specific Determination of the Origin of the Luminescent Bands in Silicon Nanowires

Abstract: We have performed temporally resolved X-ray excited optical luminescence measurements on Si nanowires. By performing Si K edge X-ray excitation measurements we have determined that the short-lifetime components have primarily Si character, while the long-lifetime component stems from the SiO2 shell and SiO2−Si interface. The lifetime of the short-lifetime component decreases with increasing luminescence energy, i.e., as the size of the nanosilicon species decreases.

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Cited by 8 publications
(12 citation statements)
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“…These vacancies exhibit a very rich structure because of the large variations in local bonding that are possible in the amorphous network (bonds angles and lengths) which may account for the observed wide broadening of the F-band. Moreover, Rosenberg et al 19 have noted a similar band at 2.4 eV for silicon nanowires and related it to the recombination not only from the defect states, but also from Si-NC's core. Other mechanisms have also been proposed as a source of the emission at 2.4 eV, mostly oxide-related.…”
Section: Resultsmentioning
confidence: 91%
“…These vacancies exhibit a very rich structure because of the large variations in local bonding that are possible in the amorphous network (bonds angles and lengths) which may account for the observed wide broadening of the F-band. Moreover, Rosenberg et al 19 have noted a similar band at 2.4 eV for silicon nanowires and related it to the recombination not only from the defect states, but also from Si-NC's core. Other mechanisms have also been proposed as a source of the emission at 2.4 eV, mostly oxide-related.…”
Section: Resultsmentioning
confidence: 91%
“…The 623 nm PLY, on the other hand, shows pure SiO 2 features identical to TEY as is observed at the Si L‐edge discussed above. Although previously reported chemically or ambient oxidized porous Si as well as Si nanowires have luminescence within the similar wavelength region,14, 31 the PLY spectra in those cases have a mixed feature of Si and SiO 2 . In our case, no Si or its sub‐oxide contribution is observed, thus the doublet 623–645 nm emission is likely solely due to SiO 2 .…”
Section: Resultsmentioning
confidence: 68%
“…directo [Kovalev 1998, Rosso-Vasic 2008b, atribuyendo importancia al grado de oxidación de la superficie de las nanopartículas y defectos superficiales favoreciendo las transiciones cuasi-directas [Kuntermann 2008].…”
Section: K π λ =unclassified
“…Se debe valorar cuidadosamente el método a utilizar, ya que distintos métodos de síntesis dan lugar a la obtención de partículas con diferente morfología y superficie y por tanto con distintas propiedades finales. Entre los métodos de síntesis de nanopartículas descritos en la literatura se pueden resaltar los basados en la reducción química de silanos [Rosso-Vasic 2008b, Rosso-Vasic 2009, la ablación del cristal de silicio por laser pulsado [Du 2009], la descomposición asistida por plasma [Shen 2010] y los métodos electroquímicos de grabado [Eckhoff 2006]. Hasta el momento ningún método de síntesis se ha estandarizado ni catalogado como óptimo para la producción de nanopartículas debido a que cada uno de ellos genera partículas con diferente distribución de tamaños, estructura y composición superficial.…”
Section: Síntesisunclassified
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