2012
DOI: 10.1016/j.synthmet.2011.08.007
|View full text |Cite
|
Sign up to set email alerts
|

Temporal and thermal properties of optically induced instabilities in P3HT field-effect transistors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

2
10
0
2

Year Published

2012
2012
2024
2024

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 22 publications
(14 citation statements)
references
References 20 publications
2
10
0
2
Order By: Relevance
“…Using the threshold voltage ܸ ௧ of -4.8 V and the relation ܰ ௧ ൌ ‫ܥ‬ • ܸ ௧ ሺ݁ • ݀ሻ ⁄ a low interface trap density ܰ ௧ of 2.26·10 11 cm -2 has been estimated. This is in accordance to values reported for the parent uncross-linked analogue PMMA (4.2·10 11 cm -2 [34], (0.2-10)·10 11 cm -2 [35]) and PS (6.93·10 11 cm -2 [36]). Although the field effect mobility in the saturation regime is not so high (0.04 cm²V -1 s -1 ), the leakage currents are at least three orders of magnitude lower than the drain current which confirms the good dielectric properties of cross-linked PAZ 14.…”
Section: Characterization Of Ofet-devicessupporting
confidence: 91%
See 2 more Smart Citations
“…Using the threshold voltage ܸ ௧ of -4.8 V and the relation ܰ ௧ ൌ ‫ܥ‬ • ܸ ௧ ሺ݁ • ݀ሻ ⁄ a low interface trap density ܰ ௧ of 2.26·10 11 cm -2 has been estimated. This is in accordance to values reported for the parent uncross-linked analogue PMMA (4.2·10 11 cm -2 [34], (0.2-10)·10 11 cm -2 [35]) and PS (6.93·10 11 cm -2 [36]). Although the field effect mobility in the saturation regime is not so high (0.04 cm²V -1 s -1 ), the leakage currents are at least three orders of magnitude lower than the drain current which confirms the good dielectric properties of cross-linked PAZ 14.…”
Section: Characterization Of Ofet-devicessupporting
confidence: 91%
“…However, due to the thinner layer thickness of the PAZ 12 dielectrics the interface trap density is calculated to be 2.65·10 11 cm -2 and 2.92·10 11 cm -2 for the 150 nm and 92 nm thick layer, respectively. This turns out to be in the same order of magnitude as for the PAZ 14-based device which is in accordance with OFETs with non-cross-linked PMMA dielectric 34,35 . From the drain currents of the PAZ 12 devices the mobility can be calculated by the Shockley equations.…”
Section: Characterization Of Ofet-devicessupporting
confidence: 82%
See 1 more Smart Citation
“…Later, a CTC between P3HT and molecular oxygen was reported, and evidence for doped P3HT species was found 69. Unintentional CP doping by molecular oxygen can decrease the performance of organic transistors69a,70 and solar cells,71 and thus, should be avoided. In contrast, controllable CP doping by organic molecules, that is, organic doping, could be a promising approach for tuning the electronic properties of CP films.…”
Section: Ground Statementioning
confidence: 99%
“…The crystallization of the film out of the melt provides a time effective, reproducible preparation method for OFETs with a device performance that easily competes with the performance of devices produced by the more time consuming and complex crystal growth . This straight forward post‐deposition treatment enhances OFETs to a performance comparable to that of P3HT devices and PPE devices fabricated by much more elaborate film forming processes.…”
Section: Introductionmentioning
confidence: 99%