1996
DOI: 10.1016/s0022-3115(96)00246-2
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Tensile fracture characterization of braze joined copper-to-CFC coupon assemblies

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Cited by 17 publications
(5 citation statements)
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“…For HT-7 device, joining DG to stainless steel by mechanical joining (using bolts) at present for tentative experiment, unfortunately, the thermal conductivity and strength of the assembly were not sufficiently satisfactory and therefore it cannot meet the high potential power requirement in the foreseeable future in HT-7U device (it is the update of HT-7) and to our best knowledge, there are very limited studies on chemical joining graphite to copper up to now (Appendino et al, 2004;Trester et al, 1996).…”
Section: Introductionmentioning
confidence: 99%
“…For HT-7 device, joining DG to stainless steel by mechanical joining (using bolts) at present for tentative experiment, unfortunately, the thermal conductivity and strength of the assembly were not sufficiently satisfactory and therefore it cannot meet the high potential power requirement in the foreseeable future in HT-7U device (it is the update of HT-7) and to our best knowledge, there are very limited studies on chemical joining graphite to copper up to now (Appendino et al, 2004;Trester et al, 1996).…”
Section: Introductionmentioning
confidence: 99%
“…Since 1998, C/C composites have been selected as the first-wall protection material for the internal copper alloy cooling tubes in the cooling system protecting the vertical target of the International Thermonuclear Experimental Reactor (ITER) deflector due to their excellent overall performance, which are showed in Table 2 [38][39][40][41][42][43][44][45]. The ITER's engineering team achieved a reliable connection between the C/C composite and OF-Cu by brazing.…”
Section: Brazing Of C/c Composites With Copper and Copper Alloysmentioning
confidence: 99%
“…High–output power semiconductor devices are promising components that improve energy efficiency for many electronic applications such as automobiles and high‐speed trains. In the manufacturing of high–output power semiconductor devices, joining metal and ceramics is required to improve thermal conductivity 1–8 …”
Section: Introductionmentioning
confidence: 99%
“…In the manufacturing of high-output power semiconductor devices, joining metal and ceramics is required to improve thermal conductivity. [1][2][3][4][5][6][7][8] We have previously reported a method of joining aluminum and silicon nitride by using an organosilicon polymer. 8,9 The polymer sandwiched by aluminum and a ceramic substrate could be transformed into a sort of glass layer such as aluminum silicate and SiAlON by thermal decomposition of the polymer and diffusion of atoms derived from the aluminum and substrate.…”
Section: Introductionmentioning
confidence: 99%