Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

Rauter, Patrick; Mußler, Gregor; Grützmacher, Detlev; Fromherz, T.

doi:10.1063/1.3593134

Cited by 17 publications

(11 citation statements)

References 9 publications

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“…The operating wavelength range of the device can be varied via the bias voltage. The long-wave responsivity measured at 90 K (approximately 1 mA/W) is higher or comparable to previously reported values for Ge/Si QDIPs [13,14] and SiGe/Si QWIPs [23] at much lower temperatures (10 to 20 K). The proposed device is compatible with the existing Si readout circuitry and suitable for monolithic focal plane array applications.…”

Section: Discussionsupporting

confidence: 86%

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

et al. 2013

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We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage.

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Section: Discussionsupporting

confidence: 86%

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

et al. 2013

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“…peak responsivities significantly higher than any of the QWIPs previously reported by the authors, both on conventional Si substrates [16] and on virtual substrates [27,37]. Fig.…”

Section: Spectral Characterization Of the Sige Qwip Responsivitymentioning

confidence: 47%

SiGe quantum well infrared photodetectors on strained-silicon-on-insulator

et al. 2019

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We demonstrate p-type SiGe quantum well infrared photodetectors (QWIPs) on a strained-silicon-on-insulator (sSOI) substrate. The sSOI system allows strain-balancing between the QWIP heterostructure with an average composition of Si 0.7 Ge 0.3 and the substrate, and therefore lifts restrictions to the active material thickness faced by SiGe growth on silicon or silicon-on-insulator substrates. The realized sSOI QWIPs feature a responsivity peak at detection wavelengths around 6 µm, based on a transition between heavy-hole states. The fabricated devices have been thoroughly characterized and compared to equivalent material simultaneously grown on virtual Si 0.7 Ge 0.3 substrates based on graded SiGe buffers. Responsivities of up to 3.6 mA/W are achieved by the sSOI QWIPs at 77 K, demonstrating the large potential of sSOI-based devices as components for a group-IV optoelectronic platform in the mid-infrared spectral region.

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“…1b) by the light-hole subband in the tensile strained well and by the heavy-hole subband in the compressed well. Thus, the quantum well band structure was inverted [2,17,18]. Figure 2 shows the calculated light absorption spectra for TE and TM polarizations in the Si/Ge 0.5 Si 0.5 /Si QW formed on the relaxed buffers of the Ge y Si 1 − y solid solution with the composition y varying from 0.3 to 0.7.…”

Section: Calculation Resultsmentioning

confidence: 99%

Interlevel optical transitions in Si/Ge x Si1−x /Si quantum wells

Bloshkin

2014

Optoelectron.Instrument.Proc.

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Results of mathematical simulation of the hole spectrum and optical absorption in Si/GexSi1 − x/Si quantum wells formed on virtual GeySi1 − y substrates are presented. It is shown that the presence of elastic strains in such a system can significantly change the position of absorption lines in GeSi heterostructures. Selecting the quantum well and virtual substrate compositions can change the intersublevel absorption wavelength in the range from 6 to 12 µm for light polarized in the quantum well plane. When tensile strain is applied, the change in the hole transition intensity under the influence of the light polarized in the quantum well plane reaches a factor of 1.8. Compressive strain changes the intersubband transition intensity by a factor of 1.45 .

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Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

Cited by 17 publications

References 9 publications

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

SiGe quantum well infrared photodetectors on strained-silicon-on-insulator

Interlevel optical transitions in Si/Ge x Si1−x /Si quantum wells

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