Terahertz dual-wavelength quantum cascade laser based on GaN active region

Mirzaei, B.; Rostami, Ali; Baghban, Hamed

doi:10.1016/j.optlastec.2011.07.020

Cited by 27 publications

(20 citation statements)

References 25 publications

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“…GaAs‐based quantum cascade lasers operating in this spectral range are limited by intrinsic material properties, namely the longitudinal‐optical (LO) phonon, which exists at 36 meV (34 µm). This phonon has motivated research on the AlGaN system, which has a large LO‐phonon energy (92 meV, 13 µm) that theoretically permits room‐temperature operation of quantum cascade lasers , and the fabrication of intersubband (ISB) devices covering the 5–10 THz band, inaccessible to As‐based technologies.…”

Section: Introductionmentioning

confidence: 99%

THz intersubband transitions in AlGaN/GaN multi‐quantum‐wells

Beeler

Bougerol

Bellet‐Amalaric

et al. 2014

Physica Status Solidi (a)

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Various designs of AlGaN/GaN structures displaying intersubband absorption in the THz spectral range are reported upon. Firstly, samples with 3‐layer quantum wells (step‐quantum‐wells) displaying far‐infrared intersubband absorption are presented. Theoretical analysis of the reproducibility issues associated to this architecture is done, and a more robust design based on 4‐layer quantum wells is proposed. Such a structure has been fabricated by plasma‐assisted molecular‐beam epitaxy using two Al effusion cells to produce three AlGaN concentrations, without growth interruptions. Samples have been structurally validated by transmission electron microscopy and X‐ray diffraction. Fourier transform infrared spectroscopy measurements show far‐infrared absorption of TM‐polarized light, which gets broader and deeper for increasing doping levels.

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Section: Introductionmentioning

confidence: 99%

THz intersubband transitions in AlGaN/GaN multi‐quantum‐wells

Beeler

Bougerol

Bellet‐Amalaric

et al. 2014

Physica Status Solidi (a)

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“…where θ(z) is the Heaviside step function, m 0 = m (2) ; m 1 = m (0) = m (1) = m (3) = m (5) = m (7) = m (8) ; m 2 = m (4) = m (6) is the effective electron mass in the potential barriers and wells of the RTS, (6) is dielectric permeability of nanostructure material layers, respectively. The magnitude of the macroscopic polarization P (p) that arises in an arbitrary p-th RTS layer is the sum of spontaneous P Pz polarizations calculated according to the general theory [9][10][11]:…”

Section: -2mentioning

confidence: 99%

Analytical method for calculation of the potential profiles of nitride-based resonance tunneling structures

Boyko¹

2018

Condens. Matter Phys.

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Using the effective mass model for an electron and the dielectric continuum model, analytical solutions of the self-consistent Schrödinger-Poisson system of equations are obtained. Quantum mechanical theory of electronic stationary states, the oscillator strengths of quantum transitions and a method of potential profile calculation is developed for the experimentally constructed three-well resonance-tunneling structure -a separate cascade of quantum cascade detector. For the proposed method, a comparison with the results of other methods and with the results of the experiment was carried out. A good agreement between the calculated value of the detected energy and its experimental value has been obtained, the difference being no more than 2.5%.

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“…LO phonon for GaN is located at 92 meV. 87 According to the studies by the research group of Paiella and Moustakas at Boston University, as shown in Fig. 8, the population inversion and hence the gain coefficient of the GaN/AlGaN QWs dependence on the temperature is three times smaller than that of GaAs/ AlGaAs for THz emission and the gain coefficient of the nitride device remain large enough for laser action even without cryogenic cooling.…”

Section: Gan-based Quantum Cascade Lasersmentioning

confidence: 99%

“…For instance, GaN-based quantum-cascade lasers (QCL) can operate in 5 to 12 THz, 86 whereas the operation of conventional naturally cooled GaAs-based QCLs in the upper THz frequency band is limited by longitudinal-optical (LO) phonon of 36 meV. 87 For overcoming the large beam diameter, diffraction, and absorption issue, THz imaging and spectroscopy systems that can operate in the upper THz frequency band and with higher photon densities are needed. Wide bandgap semiconductor devices provide promising features for implementing such devices.…”

Section: Introductionmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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Terahertz dual-wavelength quantum cascade laser based on GaN active region

Cited by 27 publications

References 25 publications

THz intersubband transitions in AlGaN/GaN multi‐quantum‐wells

THz intersubband transitions in AlGaN/GaN multi‐quantum‐wells

Analytical method for calculation of the potential profiles of nitride-based resonance tunneling structures

Review of GaN-based devices for terahertz operation

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