Terahertz Electronic Devices

Aniel, F.; Auton, Gregory; Cumming, David R. S.; Feiginov, M.; Gebert, S.; González, T.; Li, Chong; Lisauskas, Alvydas; Marinchio, H.; Matéos, J.; Palermo, C.; Song, Aimin; Treuttel, J.; Varani, L.; Zerounian, N.

doi:10.1007/978-3-030-79827-7_22

Springer Handbooks

2022

DOI: 10.1007/978-3-030-79827-7_22

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Terahertz Electronic Devices

F. Aniel

Gregory Auton

David R. S. Cumming

et al.

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Cited by 8 publications

References 244 publications

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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Íñiguez-de-la-Torre,

Pérez-Martín,

Artillan

et al. 2023

Applied Physics Letters

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The detection capability of GaN-based nano-diodes is measured up to 110 GHz in two configuration schemes: voltage and current responsivity. The ratio between both figures of merit allows one to extract the AC resistance of the diode, showing a very flat value in all the frequency spans. An optimization on the geometrical parameters is performed, finding that the narrower the channel, the higher the voltage responsivity, and the higher the number of channels in parallel, the higher the current responsivity. The expected dependence of the noise equivalent power with the width and number of channels is confirmed. The proposed configuration for best performance of these devices as RF detectors is to allocate the maximum number of channels in parallel and operate in a current responsivity mode.

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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Íñiguez-de-la-Torre,

Pérez-Martín,

Artillan

et al. 2023

Applied Physics Letters

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A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

García-Sánchez

Rengel

Pérez

et al. 2023

IEEE Trans. Electron Devices

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The existence of leakage current pathways leading to the appearance of impact ionization and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a combined Monte Carlo-deep learning approach. Front-view (lateral) Monte Carlo simulations of the devices show the appearance of a high-field hotspot at the anode corner of the etched region, just at the boundaries between the dielectric, the GaN-doped layer, and the buffer. Thus, if the isolation created by the etched trenches is not complete, a relevant hot carrier population within the buffer is observed at sufficiently high applied voltages, provoking the appearance of a very significant number of impact ionizations and the consequent avalanche process before the onset of Gunn oscillations. A neural network trained from Monte Carlo simulations allows predicting with extremely good precision the breakdown voltage of the diodes depending on the doping of the GaN active layer, the permittivity of the isolating dielectric, and the lattice temperature. Low doping, high temperature and high permittivity provide larger operational voltages, which implies a tradeoff with the conditions required to achieve THz Gunn oscillations at low voltages.

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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I–V Curve and S-Parameters

Paz-Martínez

Artillan

Matéos

et al. 2024

IEEE Trans. Microwave Theory Techn.

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Terahertz Electronic Devices

Cited by 8 publications

References 244 publications

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I–V Curve and S-Parameters

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