Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states

Firsov, D. A.; Shalygin, V. A.; Panevin, V. Yu.; Melentyev, G. A.; Sofronov, A. N.; Vorobjev, L. E.; Andrianov, A. V.; Zakhar’in, A. O.; Mikhrin, V. S.; Васильев, А. П.; Zhukov, A. E.; Gavrilenko, L. V.; Гавриленко, В. И.; Антонов, А. В.; Aleshkin, V. Ya.

doi:10.1134/s1063782610110023

Cited by 15 publications

(7 citation statements)

References 3 publications

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“…In support of the suggested mechanism of terahertz radiation one can compare obtained emission spectra and spectra of photoconductivity measured in this structure before [4]. Both these spectra are shown in Fig.…”

Section: Thz Emission Under Interband Optical Pumpingsupporting

confidence: 62%

“…The emission spectrum consists of two discernible regions of 5-12 and 15-28 meV. Ionization energy of Si impurity in the investigated structure as it was calculated in Ref [4] is about 8.8 meV. It follows that the emission in the range of 15-28 meV cannot be connected with Si-related electron transitions.…”

Section: Thz Emission Under Interband Optical Pumpingmentioning

confidence: 66%

“…2. We used energies of electron transitions calculated in [4] for the structure with the same parameters. Energies of electron transitions between the first subband and impurity ground state e1→1s and between excited and impurity ground states 2p x,y →1s are 8.8 and 6.5 meV, respectively, and are shown by arrows in Fig.…”

Section: Thz Emission Under Interband Optical Pumpingmentioning

confidence: 99%

“…In Ref. [4] terahertz emission was observed in the n-GaAs/AlGaAs quantum well structure under impurity breakdown in a strong electric field. This emission was related to electron intraband optical transitions from the conduction band to donor levels, transitions between bound donor states, and transitions between resonant and bound donor states.…”

Section: Introductionmentioning

confidence: 99%

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Impurity-related terahertz emission from quantum well nanostructures

Firsov¹,

Vorobjev²,

Panevin³

et al. 2014

Lith. J. Phys.

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Terahertz emission in GaAs/AlGaAs quantum well structures doped with shallow impurities was studied in conditions of interband optical excitation for n-doped structures and impurity breakdown in the lateral electric field for p-doped structures. Emission spectra were obtained. It was shown that the observed emission is related to optical transitions of charge carriers between impurity levels and to impurity-band transitions. The depopulation of the final states under interband optical pumping was realized with recombination of non-equilibrium holes and electrons localized at neutral donors.

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Section: Thz Emission Under Interband Optical Pumpingsupporting

confidence: 62%

Section: Thz Emission Under Interband Optical Pumpingmentioning

confidence: 66%

Section: Thz Emission Under Interband Optical Pumpingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Impurity-related terahertz emission from quantum well nanostructures

Firsov¹,

Vorobjev²,

Panevin³

et al. 2014

Lith. J. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Ionization energy of Si impurity in the investigated structure as it was calculated in Ref [4] is about 8.8 meV. It follows that the emission in the range of 15-28 meV cannot be connected with Si-related electron transitions.…”

Section: Thz Emission Under Interband Optical Pumpingmentioning

confidence: 93%