Terahertz generation by GaAs nanowires

Trukhin, V. N.; Buyskih, A. S.; Buravlev, A. D.; Cirlin, G. É.; Kaliteevski, M. A.; Samoilov, L. L.; Samsonenko, Yu. B.

doi:10.1109/irmmw-thz.2012.6380432

Cited by 8 publications

(11 citation statements)

References 12 publications

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“…It has been used to observe currents due to an ultrafast laser-induced temperature gradient (Seebeck effect) in thermoelectric materials, 25 photocurrents driven by the built-in surface depletion field, and photocurrents due to the difference in electron and hole mobilities (photo-Dember effect) in nanowires and nanorods. 26,27 We have also recently used THz emission spectroscopy to detect ultrafast photocurrent in a macroscopically aligned single-wall carbon nanotube film without an externally applied voltage and ascribed its origin to top-bottom asymmetry in the morphology of the aligned arrays that creates a built-in electric field in the semiconducting nanotubes. 28 THz emission spectroscopy has also been previously applied to probe shift currents in GaAs, CdS, CdSe, Bi 2 Se 3 , and other materials.…”

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confidence: 99%

Ultrafast Zero-Bias Photocurrent in GeS Nanosheets: Promise for Photovoltaics

et al. 2017

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Ferroelectric semiconductors have been predicted to exhibit strong zero-bias shift current, spurring the search for ferroelectric semiconductors with band gaps in the visible range as candidates for socalled shift current photovoltaics with efficiencies not constrained by the Schockley−Queisser limit. Recent theoretical works have predicted that two-dimensional IV−VI monochalcogenides are multiferroic and capable of generating significant shift currents. Here we present experimental validation of this prediction, observing ultrafast shift currents by detecting terahertz electromagnetic pulses emitted by the photoexcited GeS nanosheets without external bias. We explore excitation fluence, orientation, and excitation polarization dependence of the terahertz emission to confirm that shift currents are indeed responsible for the observed emission. Experimental observation of zero-bias photocurrents puts GeS nanosheets forth as a promising candidate material for applications in third-generation photovoltaics based on shift current, or bulk photovoltaic effect.

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Ultrafast Zero-Bias Photocurrent in GeS Nanosheets: Promise for Photovoltaics

et al. 2017

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“…9 The increase of THz generation efficiency with GaAs nanowires (NWs) was reported in our recent study. 10 It should also be mentioned that there is another type of quasi-one-dimensional structures, carbon nanotubes, in which strong slowing down of surface electromagnetic waves in single-wall carbon nanotubes and the ballistic electron motion may allow nanotubes to be used as nanoscale Cherenkov-type emitters in the terahertz frequency range. 11 This letter reports a detailed investigation of the mechanism behind the THz emission from these GaAs nanowires under short pulse illumination.…”

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confidence: 99%

Terahertz generation by GaAs nanowires

Trukhin

Buyskikh

Kaliteevskaya

et al. 2013

Applied Physics Letters

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“…Scanning photocurrent microscopy based on far-field optics has been successfully applied in the last few years to investigate local photocurrents induced by visible and near/mid-infrared illumination in one-dimensional (1D) nanostructures such as NWs 13,23 and nanotubes. [24][25][26] The extension of photocurrent microscopy to the THz frequency range, an interesting frontier for the rapidly emerging development of micro-and nanosources, 22,27 nanodetectors, 14,20,25,28 modulators [29][30][31] and metamaterials, 32 has been, however, traditionally hindered by the diffraction limit. Overcoming this limitation, near-field techniques can have a tremendous impact on engineering the aforementioned technologies with progressively improved performances and functionalities.…”

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Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

et al. 2020

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Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (<1 nW Hz−1/2) and high responsivities (>100 V/W). Nano-engineering an NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements, however, cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated. Here, we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution (35 nm) THz photocurrent nanoscopy. By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy (s-SNOM) and monitoring both electrical and optical readouts, we simultaneously measure transport and scattering properties. The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric and bolometric currents whose interplay is discussed as a function of photon density and material doping, therefore providing a route to engineer photo-responses by design.

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Terahertz generation by GaAs nanowires

Cited by 8 publications

References 12 publications

Ultrafast Zero-Bias Photocurrent in GeS Nanosheets: Promise for Photovoltaics

Ultrafast Zero-Bias Photocurrent in GeS Nanosheets: Promise for Photovoltaics

Terahertz generation by GaAs nanowires

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

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