Terahertz generation from electron- and neutron-irradiated semiconductor crystal surfaces

Synthesis and characterization of a new rare earth borate nonlinear optical crystal K7PbLu2B15O30

“…Nonlinear optical (NLO) materials have an important role in lithography, semiconductor manufacturing, and laser technology. [1][2][3][4][5][6][7][8] Over the past few decades, with continuous efforts, scientists have developed many commercially available NLO materials for application in the ultraviolet to mid-infrared regions, for example BaB 2 O 4 (BBO), 9 LiB 3 O 5 (LBO), 10 KH 2 PO 4 (KDP), 11 KTiOPO 4 (KTP), 12 AgGaQ 2 (Q = S, Se), 13,14 ZnGeP 2 (ZGP), 15 LiGaS 2 , 16 LiInSe 2 , 17 and GaSe. 18 In general, the following specifications must also be satisfied for a NLO crystal with suitable performance: 19 a non-centrosymmetric space group to perform the NLO function, an enough effective NLO coefficient (d eff > 0.39 pm V −1 ), a wide band gap (E g > 6.2 eV) and an acceptable birefringence (0.05-0.1) to achieve phase matching.…”

Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes

“…For this purpose, appropriate technologies for modifying the properties of semiconductors (doping from melt, diffusion doping, ion implantation and irradiation, temperature treatments, etc.) were developed [2][3][4][5][6][7]. In particular, it is common knowledge that the diffusion doping of GaAs by Cr allows the fabrication of efficient ionizing radiation detectors on the basis of such materials with electron lifetimes of 20-80 ns [4][5][6].…”