Terahertz Micromachined On-Wafer Probes: Repeatability and Reliability

Chen, Lihan; Zhang, Chunhu; Reck, Theodore; Arsenovic, Alexander; Bauwens, Matthew F.; Groppi, Christopher; Lichtenberger, Arthur W.; Weikle, Robert M.; Barker, N. Scott

doi:10.1109/tmtt.2012.2205016

Cited by 34 publications

(42 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the beam spot on the planar antennas is rather sensitive to alignment errors (this is akin to the conventional contact-probe landing accuracy), illumi nation of each non-contact probe slightly differs from one another through the calibration process. Effects of such errors on measurement accuracy can be minimized using multiple, shorted CPW lines as calibration standards, as described previously in [5] using contact probes. However, different from [5], the contact-probe landing pads are replaced by planar butterfly antennas in our setup as shown in Fig.…”

Section: Calibration Of Non-contact Probesmentioning

confidence: 99%

“…Effects of such errors on measurement accuracy can be minimized using multiple, shorted CPW lines as calibration standards, as described previously in [5] using contact probes. However, different from [5], the contact-probe landing pads are replaced by planar butterfly antennas in our setup as shown in Fig. 2.…”

Section: Calibration Of Non-contact Probesmentioning

confidence: 99%

“…In the first tier, THz frequency extenders are calibrated using a waveguide calibration kit. In the second tier, a I-port calibration with offset shorts [5] is performed. The resulting error parameters obtained in the second-tier of calibration are shown in Fig.…”

Section: Insertion Loss Of Non-contact Probesmentioning

confidence: 99%

See 2 more Smart Citations

Non-contact probes for device and integrated circuit characterization in the THz and mmW bands

Caglayan

Trichopoulos

Sertel

2014

2014 IEEE MTT-S International Microwave Symposium (IMS2014)

View full text Add to dashboard Cite

We present a novel, non-contact, on-wafer device characterization method covering both THz (300 GHz-3 THz) and mmW bands (60-300GHz). Unlike existing contact probes which rely on fragile tips and physical contact with the device on the chip, the new non-contact probe setup is based on radiative coupling of vector network analyzer test ports into the coplanar waveguide environment of monolithic devices and integrated circuits via planar, on-chip, broadband antennas. The on-chip antennas act as "virtual" probe-tips on the test wafer and connect to the device through optimized, impedance matched coplanar waveguide (CPW) lines. Proof-of-concept validation is presented for the 32S-7S0GHz band using WR2.2 and WR1.S frequency extender modules and a standard vector network analyzer as the backend. Owing to the non-contact nature, these new probes are free from wear/tear and fragility issues. More importantly, they are low cost and can be easily scaled beyond 900 GHz where there is no existing solution for on-wafer device and integrated circuit testing.

show abstract

Section: Calibration Of Non-contact Probesmentioning

confidence: 99%

Section: Calibration Of Non-contact Probesmentioning

confidence: 99%

See 1 more Smart Citation

Non-contact probes for device and integrated circuit characterization in the THz and mmW bands

Caglayan

Trichopoulos

Sertel

2014

2014 IEEE MTT-S International Microwave Symposium (IMS2014)

View full text Add to dashboard Cite

show abstract

“…The basic probe concept, illustrated in figure 1, consists of a milled split-block waveguide housing and an integrated dropin silicon chip with integrated waveguide probe, mounting/alignment tabs, bias filter, and transition to coplanar waveguide contact tips [3][4][5]. The probe housing includes a waveguide channel that extends from the housing flange (where the probe interfaces with external measurement equipment) to the probe chip (illustrated in figure 1(b)), terminating in a backshort.…”

Section: Probe Designmentioning

confidence: 99%

Micromachined probes for on-wafer measurement of millimeter- and submillimeter-wave devices and components

Weikle

Barker

Lichtenberger

et al. 2013

2013 IEEE Global Conference on Signal and Information Processing

Self Cite

View full text Add to dashboard Cite

Terahertz components and devices are typically interfaced with measurement instrumentation and characterized using fixtures equipped with waveguide flanges. Because such fixtures are known to introduce significant uncertainty and error in measurement, it is preferable to characterize such devices insitu, where the device under test can be measured on-wafer, prior to dicing and separately from the circuit housing to which it is ultimately affixed. This is common practice in the RF and millimeter-wave region using probe stations equipped with coplanar launchers. Commercial coplanar waveguide probes have generally been available to the WR-2.2 band (325-500 GHz) but few options currently exist for on-wafer measurements above these frequencies. This paper describes recent work at the University of Virginia and Dominion Microprobes, Inc. to extend on-wafer measurement capabilities to terahertz frequencies through the design and implementation of coplanar probes based on silicon micromachining. At present micromachined on-wafer probes operating to WR1.2 (600 to 900 GHz) have been demonstrated and exhibit typical insertion losses lower than 7 dB with return loss of 15 dB or greater over a full waveguide band.

show abstract

“…However, due to the extremely small dimensions and reduced stiffness of the probe, it is impractical to determine the contact condition by observing scratch marks on test pads as is done at lower frequencies. In a previous work, a load cell has been used to control the contact force [8]. However, it is difficult to incorporate a load cell with the standard probe station, which may require significant modification to the test system.…”

Section: Introductionmentioning

confidence: 99%

Improved Micromachined Terahertz On-Wafer Probe Using Integrated Strain Sensor

Bauwens

Zhang

et al. 2013

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

This paper introduces an improved method for monitoring and controlling the contact condition of terahertz on-wafer probes to enhance the measurement repeatability as well as probe lifetime. This method enables accurate contact force and contact angle measurements without modification to the standard probe station. Both probe contact force and contact angle are crucial for RF measurement repeatability. Repeatable probe contact force can be achieved by properly monitoring and controlling the strain generated at designated positions on the terahertz probe due to probe deformation induced by contacting the test substrate. Contact angle can be measured by asymmetrical strain on symmetrical positions of the probe when the probe is contacting the test substrate with angular misalignment. In this work a WR-1.5 (500 GHz-750 GHz) probe with integrated strain sensor is developed and tested. Mechanical tests show that the integrated sensors have a contact force resolution of 0.2 mN and a contact angle resolution of 0.05 about the center. RF tests show that repeatable measurements can be achieved with 3 mN contact force after adjusting probe contact angle using the integrated sensors, as compared to a previously reported value of 15 mN.Index Terms-Micromachining, probes, strain measurement, submillimeter wave measurement, thin film sensors.

show abstract

Terahertz Micromachined On-Wafer Probes: Repeatability and Reliability

Cited by 34 publications

References 12 publications

Non-contact probes for device and integrated circuit characterization in the THz and mmW bands

Non-contact probes for device and integrated circuit characterization in the THz and mmW bands

Micromachined probes for on-wafer measurement of millimeter- and submillimeter-wave devices and components

Improved Micromachined Terahertz On-Wafer Probe Using Integrated Strain Sensor

Contact Info

Product

Resources

About