Terahertz Plasmonic Technology

Shur, M. S.

doi:10.1109/jsen.2020.3022809

Cited by 27 publications

(9 citation statements)

References 131 publications

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“…TeraFET technology will also enable THz applications including astronomical science [ 133 , 134 , 135 ], earth observation [ 136 ], sensing [ 137 , 138 , 139 ], chemical analysis [ 140 , 141 ], homeland security, concealed weapon and explosive detection [ 142 , 143 ], industrial controls [ 144 , 145 ], compact radars [ 146 , 147 ], structural integrity testing, spacecraft tiles control [ 144 ], Internet of Things (IoT), biotechnology [ 148 , 149 , 150 ], medicine [ 151 , 152 ], including cancer diagnostics [ 153 ], and non-destructive VLSI testing during the manufacturing process [ 154 ] and in-situ checking of the THz scans of chips [ 155 , 156 , 157 , 158 , 159 ]. Artificial intelligence processing of the VLSI THz scans allows distinguishing between genuine and fake VLSI for hardware cyber security applications [ 158 ].…”

Section: Other Terafet Applicationsmentioning

confidence: 99%

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Shur

Aǐzin

Otsuji

et al. 2021

Sensors

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Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub-THz radiation. Such transistors (often referred to as TeraFETs) include short-channel silicon complementary metal oxide (CMOS). The ballistic and quasi-ballistic electron transport in the TeraFET channels determine the TeraFET response at the sub-THz and THz frequencies. TeraFET arrays could form plasmonic crystals with nanoscale unit cells smaller or comparable to the electron mean free path but with the overall dimensions comparable with the radiation wavelength. Such plasmonic crystals have a potential of supporting the transition to 6G communications. The oscillations of the electron density (plasma waves) in the FET channels determine the phase relations between the unit cells of a FET plasmonic crystal. Excited by the impinging radiation and rectified by the device nonlinearities, the plasma waves could detect both the radiation intensity and the phase enabling the line-of-sight terahertz (THz) detection, spectrometry, amplification, and generation for 6G communication.

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Section: Other Terafet Applicationsmentioning

confidence: 99%

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Shur

Aǐzin

Otsuji

et al. 2021

Sensors

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“…THz range (0.1 THz to 30 THz) for organic and chemical matter detection. [9] Emerging plasmonic TeraFETs [10][11][12] and TeraFET arrays [13][14][15] have the potential to meet the challenging task of developing inexpensive efficient, reliable 6G transceivers. The receiver part of this puzzle is easier to solve since CMOS sub-THz and THz sub-THz and THz detectors have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Potential of ultra-wideband gap semiconductors for sub-THz and THz applications

Shur

2023

Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVI

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Applications of terahertz (THz) and sub-THz technology require portable, inexpensive, efficient, and reliable THz electronics. This stimulated the search for novel semiconductor materials for THz applications. This paper evaluates the potential of ultra-wide bandgap semiconductors (UWBGS) for THz and sub-THz applications. The wide bandgap is the consequence of strong bonds between the nearest neighbors in UWBGS, such as diamond, boron nitride, and aluminum nitride. This is the consequence of small atomic radii of carbon and nitrogen forming intimate contacts with their nearest neighbors. The resulting high energies of optical phonons in these materials lead to superior transport properties, including high breakdown voltages and long mean free paths of electrons in the conduction band and holes in the valence band. These factors make ultra-wideband semiconductors prime candidates for high-power and high-frequency applications. The analysis of the cutoff frequencies and quality factor of plasma oscillations show that diamond has a high potential as an active material for Terahertz Field Effect Transistors (TeraFETs) generating THz and sub-THz radiation, including radiation in the 300 GHz range, which is of special interest for 6G communications. Boron nitride should enable high cutoff frequencies of operation in collision-dominated regimes.

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“…[5] The two-dimensional plasmons (2DPs) formed in two-dimensional electron gas (2DEG) in field-effect transistors (FETs) have long been considered to produce THz radiation, [6,7] and THz plasmonic semiconductor devices are considered as potential solutions for miniaturized and integrated THz emission. [8,9] As one of the representative THz emission theories, Dyakonov-Shur (DS) instability theory demonstrates that the plasma instability occurs and produces far-infrared (FIR) radiation under asymmetric boundary conditions in an HEMT. [10] After that, various microwave/THz management emitters or detectors based on plasma oscillations within semiconductor heterojunctions have been extensively investigated.…”

Section: Introductionmentioning

confidence: 99%

Numerical study on THz radiation of two-dimensional plasmon resonance of GaN HEMT array

Guo¹,

Zhang²,

Yang³

et al. 2023

Chinese Phys. B

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The GaN high electron mobility transistor (HEMT) has been considered as a potential terahertz (THz) radiation source, yet the low radiation power level restricts their applications. The HEMT array is thought to improve the coupling efficiency between two-dimensional plasmons and THz radiation. In this work, we investigate the plasma oscillation, electromagnetic radiation and the integration characteristics of GaN HEMT targeting at a high THz radiation power source. The quantitative radiation power and directivity are obtained for integrated GaN HEMT array with different array period and element number. With the same initial plasma oscillation phase among the HEMT units, the radiation power of the two-element HEMT array can achieve 4 times as the single HEMT radiation power when the array period is shorter than 1/8 electromagnetic wavelength. In addition, the radiation power of the HEMT array varies almost linearly with the element number, the smaller array period can lead to the greater radiation power. It shows that increasing the array period could narrow the main radiated lobe width while weaken the radiation power. Increasing the element number can improve both the radiation directivity and power. We also synchronize the plasma wave phases in the HEMT array by adopting an external Gaussian plane wave with central frequency the same as the plasmon resonant frequency, which solves the problem of the radiation power reduction caused by the asynchronous plasma oscillation phases among the elements. The study of the radiation power amplification of the 1-D GaN HEMT array provides useful guidance for the research of compact high-power solid-state terahertz sources.

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Terahertz Plasmonic Technology

Cited by 27 publications

References 131 publications

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Potential of ultra-wideband gap semiconductors for sub-THz and THz applications

Numerical study on THz radiation of two-dimensional plasmon resonance of GaN HEMT array

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