Terahertz Plasmonics: Good Results and Great Expectations

Otsuji, T.; Shur, M. S.

doi:10.1109/mmm.2014.2355712

Cited by 104 publications

(39 citation statements)

References 62 publications

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“…The plasma self-mixing effect can be achieved via the asymmetrical antenna coupling of a THz field between a source/drain and gate, during which the nonlinear rectification of carrier transport leads to direct detection with a responsivity of approximately 0.04~20 V/W [19][20][21][22] . Moreover, thermoelectric THz detection in graphene can be achieved by asymmetric contacting, which produces a Seebeck coefficient difference and direct photocurrent along the channel due to metal-induced asymmetrical doping 18 , and the responsivity can reach as high as 15 V/ W. While high-performance graphene-based devices have become increasingly critical to satisfying the requirements of everyday applications, the current implementation of direct THz detection is hindered by the lack of sufficient photoelectric gain 23 . The superior performance of graphene can be achieved by engineering the bias-field and electromagnetic size effects to manipulate the hot-carrier distribution.…”

Section: Introductionmentioning

confidence: 99%

Towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors

Liu

Tang

et al. 2018

NPG Asia Mater

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Graphene has been highly sought after as a potential candidate for hot-electron terahertz (THz) detection benefiting from its strong photon absorption, fast carrier relaxation, and weak electron-phonon coupling. Nevertheless, to date, graphene-based thermoelectric THz photodetection is hindered by low responsivity owing to relatively low photoelectric efficiency. In this work, we provide a straightforward strategy for enhanced THz detection based on antenna-coupled CVD graphene transistors with the introduction of symmetric paired fingers. This design enables switchable photodetection modes by controlling the interaction between the THz field and free hot carriers in the graphene-channel through different contacting configurations. Hence a novel "bias-field effect" can be activated, which leads to a drastic enhancement in THz detection ability with maximum responsivity of up to 280 V/W at 0.12 THz relative to the antenna area and a Johnson-noise limited minimum noise-equivalent power (NEP) of 100 pW/Hz 0.5 at room temperature. The mechanism responsible for the enhancement in the photoelectric gain is attributed to thermophotovoltaic instead of plasma self-mixing effects. Our results offer a promising alternative route toward scalable, wafer-level production of high-performance graphene detectors.

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Section: Introductionmentioning

confidence: 99%

Towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors

Liu

Tang

et al. 2018

NPG Asia Mater

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“…3 shows, plasmonic GaN-based heterostructure field-effect transistors (HFETs) and QCL have capabilities of operating in the upper THz frequency band of 5 to 12 THz, in room temperature and with relatively high emission powers. [92][93][94] In this paper, a comprehensive review of the history and state-of-the-art of the GaN-based electronic devices and their impact on the future of THz imaging and spectroscopy systems is provided. Plasma HFETs, negative differential resistances (NDRs), hetero-dimensional Schottky diodes (HDSDs), impact avalanche transit times (IMPATTs), QCLs, high electron mobility transistors (HEMTs), Gunn diodes, and tera field-effect transistors (TeraFETs) together with their impact on the future of THz imaging and spectroscopy systems are reviewed.…”

Section: Introductionmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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confidence: 99%

“…The RSS instability in this structure has been investigated analytically [16]. In addition, asymmetry of the gate placement expects to lead to partial realization of the asymmetric boundary conditions and, in turn, of the DS instability [9,10]. However, in FETs or high-electron-mobility transistors (HEMTs) based on usual semiconductors (Si and compound semiconductors such as InGaAs and GaN), growth rates of the instabilities are of the order of 10 11 s −1 , which are limited by electron saturation velocities ( 2 × 10 7 cm/s in the GaAs channel).…”

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Giant plasmon instability in a dual-grating-gate graphene field-effect transistor

et al. 2016

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We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only the acoustic-phonon-limited electron scattering, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed 4 × 10 12 s −1 at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. By comparing the simulation results with existing theory, it is revealed that the giant total growth rate originates from simultaneous occurence of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.PACS numbers: 72.80. Vp, 73.50.Mx Electronic, hydrodynamic, and electromagnetic properties of two-dimensional (2D) plasmons in channels of field-effect transistors (FETs) have been investigated extensively for their utilization to terahertz (THz) devices [1-6] (see also review papers [7][8][9][10] and references therein). Especially, plasmon instability is one of the most important properties to realize compact, roomtemperature operating THz sources. Self-excitation of plasmons due to instability induces ac voltages in the gate electrodes and, in turn, leads to the emission of THz waves.The so-called Dyakonov-Shur (DS) instability [2,[11][12][13] and Ryzhii-Satou-Shur (RSS) instability [14][15][16] in single-gate FETs were proposed theoretically as mechanisms of plasmon instability by dc current injection through the transistor channel. The DS instability originates from the Doppler shift effect at asymmetric boundaries in the channel, i.e., zero time-variation of pontential at the source contact and zero time-variation of electron velocity near the drain contact, which are naturally realized by operating the FET in the saturation regime. In the same saturation regime, the RSS instability takes place due to the transit-time effect of fast-moving electrons in the high-field region in the drain side. Alternatively, the so-called dual-grating-gate structure (see Fig. 1(a)), in which two types of interdigitately-placed gates form a very efficient grating coupler between THz waves and 2D plasmons [17,18], has been proposed for direct THz emission without antenna integration [17,19]. The RSS instability in this structure has been investigated analytically [16]. In addition, asymmetry of the gate placement expects to lead to partial realization of the asymmetric boundary conditions and, in turn, of the DS instability [9,10]. However, in FETs or high-electron-mobility transistors (HEMTs) based on usual semiconductors (Si and compound semiconductors such as InGaAs and GaN), growth rates of the instabilities are of the order of 10 11 s −1 , which are limited by electron saturation velocities ( 2 × 10 7 cm/s in the GaAs channel). With such low growth rates the plasmons are easily damped out at room temperature by a large damping rate ( 10 12 s −1 ) associated with electron scattering.Plasmons in...

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Terahertz Plasmonics: Good Results and Great Expectations

Cited by 104 publications

References 62 publications

Towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors

Towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors

Review of GaN-based devices for terahertz operation

Giant plasmon instability in a dual-grating-gate graphene field-effect transistor

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