Terahertz Radiation from (111) InAs Surface Using 1.55 µm Femtosecond Laser Pulses

Kondo, Takashi; Sakamoto, Masanao; Tonouchi, Masayoshi; Hangyo, Masanori

doi:10.1143/jjap.38.l1035

Cited by 25 publications

(15 citation statements)

References 13 publications

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“…The radiation originates mainly from the surge current effect and the optical rectification effect can be neglected for the power density level adopted in this experiment. 4 In this case, the surge current direction is perpendicular to the sample surface without magnetic fields, resulting in horizontal polarization for THz radiation. 11 With application of the magnetic field, the vertical polarization component appears and strong enhancement of the overall spectral intensity is observed for both the horizontal and perpendicular components.…”

Section: Resultsmentioning

confidence: 99%

“…2 Generally, both effects coexist in THz radiation from semiconductor surfaces. 3,4 Later the change of wave form and the increase in the amplitude of THz radiation were found for GaAs by applying external magnetic fields by Zhang et al 5 Sarukura et al have shown that InAs is a stronger THz emitter than GaAs and that the emission intensity increases monotonically with the external magnetic field intensity at least up to 1.7 T. 6 The enhancement of the radiation intensity under magnetic fields was confirmed for various semiconductors and the strongest radiation intensity was observed for InAs. 7 These results seem to hold promise for InAs as a compact strong THz emitter for THz spectroscopy and imaging without microfablication.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Magnetic field and temperature dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses

Hangyo

Migita

Nakayama

2001

Journal of Applied Physics

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The magnetic field (0–5 T) and temperature (10–300 K) dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses has been studied in detail. The radiation intensity is strongly enhanced under the magnetic field and at low temperatures, which is explained based on simple classical motion of photoexcited electrons under a built-in surface electric field and Lorentz force undergoing scattering. The radiation spectra are broad even at low temperatures under high magnetic fields, which suggests that strong electron scattering mechanisms exist for photoexcited electrons at InAs surfaces.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Magnetic field and temperature dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses

Hangyo

Migita

Nakayama

2001

Journal of Applied Physics

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“…A large number of investigations focused on the mechanism of THz emission from InAs. It was found that this material efficiently radiated THz pulses also when photo-excited with 1.550 µm laser [144].…”

Section: Inas and Other Narrow-gap Semiconductorsmentioning

confidence: 99%

Semiconductors for terahertz photonics applications

Krotkus¹

2010

J. Phys. D: Appl. Phys.

112

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Abstract:Generation and measurement of ultrashort, sub-picosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of the far-infrared spectroscopy and imaging. This technique -THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility, and large dark resistivity. Here we will review most important developments in the field of investigation of such materials. Main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. Main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

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“…148 LTEM has been also used for inspection of semiconductor devices. [149][150][151] Sakai et al 152 have demonstrated laser-induced THz emission from the surface of GaN, which can be used for determination of the defect density and surface potential.…”

Section: Laser-induced Thz Emission Spectroscopy For Visualization Ofmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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Terahertz Radiation from (111) InAs Surface Using 1.55 µm Femtosecond Laser Pulses

Cited by 25 publications

References 13 publications

Magnetic field and temperature dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses

Magnetic field and temperature dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses

Semiconductors for terahertz photonics applications

Review of GaN-based devices for terahertz operation

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