Terahertz Sources Based on Frequency Multiplication and Their Applications

Maestrini, A.; Ward, J.; Chattopadhyay, Goutam; Schlecht, Erich; Mehdi, Imran

doi:10.1515/freq.2008.62.5-6.118

Cited by 39 publications

(23 citation statements)

References 27 publications

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“…In recent decades, terahertz technology has been used for a variety of applications such as communication, earth atmospheric sensing, space astrophysics, etc. [1][2][3][4][5]. Furthermore, advances in terahertz sources and detectors have facilitated the development of these terahertz applications.…”

Section: Introductionmentioning

confidence: 99%

The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material

Jin

Liu

et al. 2020

Micromachines

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A global design method for a terahertz monolithic integrated frequency multiplier is proposed. Compared with a traditional independent design, the method in this paper adopts overall optimization and combines the device with the circuit design. The advantage is that it provides a customized design for frequency multipliers according to specifications. On the basis of the gallium arsenide process of the Institute of Microelectronics, Chinese Academy of Sciences, two types of Schottky diodes have been developed to meet the needs of different designs. On the one hand, a Schottky diode with a 3 μm junction’s diameter was used in the design of the 200 GHz balanced doubler and, on the other hand, a diode with a 5 μm diameter was used in the 215 GHz unbalanced tripler. The measured results indicated that the output power of the doubler was more than 250 μW at 180~218 GHz, and the maximum was 950 μW at 198 GHz when driven with 12.3 mW, whereas that of the tripler was above 5 mW at 210~218 GHz and the maximum exceeded 10 mW. Such frequency multiplier sources could be widely used in terahertz imaging, radiometers, and so on.

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Section: Introductionmentioning

confidence: 99%

The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material

Jin

Liu

et al. 2020

Micromachines

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“…Furthermore, several competing technologies [7][8][9] are proposed within the semiconductor frequency multiplier field. In comparison, the domestic researches on frequency multipliers at terahertz wave range mainly focus on the hybrid integrated circuits with discrete Schottky diodes.…”

Section: Introductionmentioning

confidence: 99%

Design of a 225 GHZ High Output Power Tripler Based on Unbalanced Structure

Jin¹,

Zhang²,

Yao³

et al. 2015

PIER C

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Abstract-We report the results of a high-output power unbalanced tripler at 225 GHz, in which a pair of discrete Schottky varactor chips in parallel is adopted. Considering the present situation of domestic processing technology, the advantage of unbalanced structure is that it could provide bias to the diodes without a on-chip capacitor, which is essential in the balanced tripler scheme. The whole circuits are built on a 50 µm-thick quartz substrate, and the novel field-circuit method is applied to the design process that enables us to calculate the impact of the parastics. The measured results indicate that the output power is more than 7 dBm in 215∼228 GHz, and the output power is 12.3 dBm at 224 GHz when driven with 23.8 dBm of input power at room temperature. In general, this tripler has important practical value.

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“…The practical limit of the output power of a frequency multiplier is typically either the power beyond which conversion efficiency drops off due to saturation effects or the device lifetime becoming unacceptably short due to thermal or reverse-breakdown effects. To increase power handling capabilities of the frequency multipliers, one approach is to optimize the nonlinear device doping and transfer the epitaxial layer to a high thermal conductivity substrate, or one can increase the number of anodes per chip [5][6][7][8][9]. However, these two approaches are unrealistic for those who use commercially available discrete Schottky diodes, and the number of anodes will be constrained by the circuit size limit imposed by the narrow transmission waveguide.…”

Section: Introductionmentioning

confidence: 99%

Design and Characterization of a W-Band Power-Combined Frequency Tripler for High-Power and Broadband Operation

Chen¹,

Xu²

2013

PIER

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Abstract-We report on the design, simulation and characterization of a solid-state W-band in-phase power-combined frequency tripler. In order to increase the output power of the frequency tripler without sacrificing efficiency and bandwidth, two mirror-image tripler circuits with four UMS R Schottky varistor diode chips are designed and mounted in a waveguide block, which includes a compact double-probe power divider at the input waveguide and a Y-junction power combiner at the output waveguide, respectively. Each circuit chip features four anodes on a 50 mil thick Rogers RT/duroid 5880 substrate. The tripler has 1.2 ∼ 3.8% conversion efficiency measured across the 75 ∼ 110 GHz band when driven with 24 dBm of input power at room temperature. With the input power of 27 dBm, 5.5 ∼ 11 dBm of saturated output power is produced over 75 ∼ 110 GHz. Suppression of undesired harmonics is greater than 17 dB.

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Terahertz Sources Based on Frequency Multiplication and Their Applications

Cited by 39 publications

References 27 publications

The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material

The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material

Design of a 225 GHZ High Output Power Tripler Based on Unbalanced Structure

Design and Characterization of a W-Band Power-Combined Frequency Tripler for High-Power and Broadband Operation

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