We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity~1.2V/W (1.3 mA/W) and a noise equivalent power~2×10 -9 W/√Hz in the 0.29-0.38THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.Generation and detection of radiation across the far infrared or Terahertz (THz) region of the electromagnetic spectrum is promising for a large variety of strategic applications, 1 ranging from biomedical diagnostics 2 to process and quality control, 3 homeland security 1 and environmental monitoring. 4 Due to its non-ionizing nature, 1 THz radiation can penetrate many commonly used dielectrics, 1 otherwise opaque for visible and mid-infrared light, allowing detection of specific spectroscopic features 5 with a sub-millimeter diffractionlimited resolution. µV/W and operating in photovoltage mode at much higher frequencies (2.5 THz).Here we report THz detectors operating at RT in either photovoltage or photocurrent mode with a significant enhancement of sensitivity and lowered NEPs compared to the state of the art. This is achieved by using either large (1 µm) gate lengths, or buried gate geometries on a bilayer graphene (BLG) FET. We use BLG instead of single layer graphene (SLG) since the modulation of carrier density was proved to be more effective in the former case, 19 allowing a higher responsivity at THz frequencies.The devices are prepared as follows. Flakes are mechanically exfoliated from graphite 24 on an intrinsic Si substrate covered with 300nm SiO 2 . BLGs are selected and identified by a combination of optical microscopy 25 and Raman spectroscopy. 26,27 These are then used to fabricate two sets of FETs (samples A, B). In A, source (S) and drain (D) contacts are patterned by electron beam lithography (EBL) and metal evaporation (5nm Cr /80 nm Au). The S contact is connected to one lobe of a 50° bow-tie antenna, and D to a 3 metal pad. After placement of 35nm HfO 2 by atomic layer deposition (ALD), the other lobe of the antenna is fabricated, and constitutes the FET gate (g). The channel length is L SD = 2.5 m, while the gate length w G =1 m (Fig. 1a). In B, one lobe of a log-periodic circular-toothed antenna is fabricated by EBL and metal evaporation to act as buried gate. After deposition of 35 nm HfO 2 by ALD, S and D electrodes are fabricated.Similar to sample A, S is the second lobe of the antenna, while the drain is a metal line connecting to a bonding pad. The channel length is 2.5 m, its width 7.5 m, while w G = 0.3m (Fig. 1b). A BLG flake is then placed onto the pre-fabricated electrodes by wet transfer. 28 Fig. 2 compares the Raman spectra of the flake prior and after placement onto the electrodes. The "2D" peak shows the characteristic multi-band s...