Terahertz time-domain spectroscopy of two-dimensional plasmons in AlGaN/GaN heterostructures

Pashnev, Daniil; Kaplas, Tommi; Korotyeyev, V. V.; Janonis, Vytautas; Urbanowicz, Andrzej; Jorudas, Justinas; Kašalynas, Irmantas

doi:10.1063/5.0014977

Cited by 25 publications

(13 citation statements)

References 31 publications

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“…Aluminium gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) are widely used in high-power and high-frequency applications due to their superior characteristics based on the unique physical properties of III-nitride materials. The AlGaN/GaN heterostructures can be grown on sapphire, silicon, silicon carbide, and native GaN substrates [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. While sapphire and silicon substrates are the most cost-effective, the best characteristics are achieved on transistors fabricated on silicon carbide (SiC) and GaN substrates.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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“…The proposed modified RCWA method is applied for investigation of particular plasmonic structures with grating-gated 2DEG channel. Such structures possess the resonant properties in the THz frequency range (wavelength of order of 100 µm) for TM-polarized incident radiation due to excitations of plasmons in conductive channel of 2DEG [7,11,19,39]. Below, we will study spectral characteristics of the AlGaN/GaN-based plasmonic structure with deeply subwavelength (micron period) metallic grating, calculating transmission (T 0 ), reflection (R 0 ) and absorption (L 0 ) coefficients, their convergence vs number of the Fourier harmonics and the near-field mapping.…”

Section: Mathematical Formalismmentioning

confidence: 99%

“…In such structures, the gratings play a role of the coupler, facilitating the resonant interaction between incident electromagnetic (em) waves and charge density waves such as surface plasmonpolaritons or 2D plasmons. Moreover, detailed investigations of the resonant properties of grating-based plasmonic structures can serve as additional tool for basic characterization of the 2D electron gas (2DEG) in QWs [11,12], graphene [13][14][15][16][17] and other novel 2D layered materials [18].…”

Section: Introductionmentioning

confidence: 99%

Modified rigorous coupled-wave analysis for grating-based plasmonic structures with delta-thin conductive channel. Far- and near-field study

Lyaschuk,

Kukhtaruk,

Janonis

et al. 2021

Preprint

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The modified rigorous coupled-wave analysis technique is developed to describe the optical characteristics of the plasmonic structures with the grating-gated delta-thin conductive channel in the far-and near-field zones of electromagnetic waves. The technique was applied for analysis of the resonant properties of AlGaN/GaN heterostructures combined with deeply-subwavelength metallic grating which facilitates the excitation of the two-dimensional plasmons in the THz frequency range. The convergence of the calculations at the frequencies near the plasmon resonances is discussed. The impact of the grating's parameters, including filling factor and thickness of the grating, on resonant absorption of the structure was investigated in details. The spatial distributions of electromagnetic field in a near-field zone were used for the evaluation of total absorption of the plasmonic structures separating contributions of the grating-gated two-dimensional electron gas and the grating coupler.

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“…In particular, optimal conditions for the excitation of 2D plasmons in standard AlGaN/GaN HEMT structures up to the room temperature were revealed recently [ 25 ]. Among other aspects, a shallow depth and a high density of 2DEG in grating-gated heterostructures allow for efficient plasmonic device operation in the THz regime [ 26 ]. In this work, the quaternary LM-InAlGaN barrier layer with indium content of 16.5 ± 0.2% and thickness of only 9 nm was developed for GaN-based heterostructures on sapphire substrate and investigated studying material structural properties, optical and electrical characteristics of the test devices.…”

Section: Introductionmentioning

confidence: 99%

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

et al. 2022

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A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, morphological, optical and electrical properties of the layer were investigated planning realization of microwave power and terahertz plasmonic devices. The measured X-ray diffraction and modeled band diagram characteristics revealed the structural parameters of the grown In0.165Al0.775Ga0.06N/Al0.6Ga0.4N/GaN heterostructure, explaining the origin of barrier photoluminescence peak position at 3.98 eV with the linewidth of 0.2 eV and the expected red-shift of 0.4 eV only. The thermally stable density of the two-dimension electron gas at the depth of 10.5 nm was experimentally confirmed to be 1.2 × 1013 cm−2 (1.6 × 1013 cm−2 in theory) with the low-field mobility values of 1590 cm2/(V·s) and 8830 cm2/(V·s) at the temperatures of 300 K and 77 K, respectively.

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Terahertz time-domain spectroscopy of two-dimensional plasmons in AlGaN/GaN heterostructures

Cited by 25 publications

References 31 publications

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Modified rigorous coupled-wave analysis for grating-based plasmonic structures with delta-thin conductive channel. Far- and near-field study

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

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