2016
DOI: 10.1016/j.carbon.2015.10.063
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Terahertz wave reflection impedance matching properties of graphene layers at oblique incidence

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Cited by 51 publications
(41 citation statements)
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“…A custom-designed angle-dependent THz-TDS39 is used to perform the reflection measurement. THz experimental geometry is shown in Fig.…”
Section: Methodsmentioning
confidence: 99%
“…A custom-designed angle-dependent THz-TDS39 is used to perform the reflection measurement. THz experimental geometry is shown in Fig.…”
Section: Methodsmentioning
confidence: 99%
“…[ 25 ] Such combinations have opened new avenues for fundamental studies and the designs of solid‐state device with varying functionalities. [ 26–28 ] Besides, a potential THz antireflection device based on graphene was achieved by stacking different layers based on the impedance matching effect, [ 38 ] the results suggested the reflectance of THz wave is sensitive to the sheet conductivity of interface and broadband zero reflection could be obtained at a particular incident angle for graphene with different layers. The VO 2 film can provide a conductivity switching of 3–5 orders of magnitude by thermally induced phase transition, and highly reflect THz wave with broad operation bandwidth in metallic phase.…”
Section: Figurementioning
confidence: 99%
“…[ 31,32,42 ] As shown in Figure 2c, the impedance matching state (with VO 2 /3l graphene) could realize a near zero reflection amplitude at the graphene/VO 2 interface. This phenomenon can be elucidated using the Fresnel equations, the relative amplitude reflection of THz wave from the graphene/VO 2 interface can be simplified as [ 38–40 ] rgra/vo2ref=(cosθinnSub)2(cosθrnAir)2(cosθinnSub+cosθrnAir)cosθincosθrZ0σ(cosθinnSub)2(cosθrnAir)2+(cosθinnSubcosθrnAir)cosθincosθrZ0σ…”
Section: Figurementioning
confidence: 99%
“…However, in order to Δ get high bolometric sensitivities, the very weak R( T e )/ T e of intrinsic graphene had to be Δ Δ artificially increased by introducing disorder [17] , patterning nanostructures [18] , or opening a band gap in bilayer graphene [14] . The fundamental challenge in this approach is set by the enormous impedance mismatch between these high impedance devices, with both -free space [19,20] and the readout circuit, which consequently results in very low light coupling efficiencies and readout bandwidths, accordingly. To overcome this issue and achieve all at the same time -high bolometric sensitivity, high readout bandwidth and efficient light absorption, it is necessary to introduce a T e readout scheme that works for high-quality, low impedance graphene and to couple the bolometer to resonant light structures.…”
mentioning
confidence: 99%