Ternary and Quaternary Chalcogenides of Si, Ge, Sn, Pb, and In

Gulay, L. D.; Daszkiewicz, Marek

doi:10.1016/b978-0-444-53590-0.00003-0

Cited by 8 publications

(3 citation statements)

References 91 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Chang et al [15] reported that Cu 2.95 Sb 1−y Ge y Se 4 (y = 0-0.06) contained a single permingeatite phase without secondary phases, and that both the a-axis and c-axis decreased with increasing Ge content. The decreased lattice constants were attributed to the smaller ionic radius of Ge 4+ (53 pm) [17] relative to that of Sb 5+ (60 pm) [8].…”

Section: Resultsmentioning

confidence: 99%

Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4

Pi¹,

Lee²,

Kim³

2021

Korean J. Met. Mater.

View full text Add to dashboard Cite

Permingeatites Cu3Sb1−yGeySe4 (0 ≤ y ≤ 0.14) were synthesized by mechanical alloying and hot pressing. The charge-transport parameters (Hall coefficient, carrier concentration, mobility, and Lorenz number) and thermoelectric properties (electrical conductivity, Seebeck coefficient, power factor, thermal conductivity, and figure of merit) were examined with respect to the Ge doping level. A single permingeatite phase with a tetragonal structure was obtained without subsequent heat treatment, but a small amount of the secondary phase Cu2GeSe3 was found for the specimens with y ≥ 0.08. All hot-pressed compacts exhibited a relative density of 97.5%–98.3%. The lattice constants of the a-axis and c-axis were decreased by the substitution of Ge at the Sb sites. As the Ge content increased, the carrier concentration increased from 5.2 × 1018 to 1.1 × 1020 cm−3, but the mobility decreased from 92 to 25 cm2·V−1·s−1. The Lorenz number of the undoped Cu3SbSe4 implied a non-degenerate semiconductor behavior, ranging from (1.57–1.56) × 10−8 V2·K−2 at 323–623 K. The thermoelectric figure of merit was 0.39 at 623 K, resulting from a power factor of 0.49 mW·m−1·K−2 and a thermal conductivity of 0.76 W·m−1·K−1. However, the Lorenz numbers of the Gedoped specimens indicated degenerate semiconductor characteristics, increasing to (1.63–1.94) × 10−8 V2·K−2 at 323–623 K. The highest thermoelectric figure of merit of 0.65 was at 623 K for Cu3Sb0.86Ge0.14Se4, resulting from the significantly improved power factor of 0.93 mW·m−1·K−2 and the thermal conductivity of 0.89W·m−1·K−1. As a result, the thermoelectric properties were remarkably enhanced by doping Ge into the Sb sites of the permingeatite.

show abstract

Section: Resultsmentioning

confidence: 99%

Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4

Pi¹,

Lee²,

Kim³

2021

Korean J. Met. Mater.

View full text Add to dashboard Cite

show abstract

“…Complex chalcogenides of the rare-earth ( RE ) elements form a large class of compounds with varied physical properties suitable for magnetic, electronic, and optical applications. − Sulfides and selenides usually behave similarly, whereas tellurides tend to be distinct. Because many RE -containing sulfides and selenides are isostructural, solid solutions with extensive mixing of S and Se anions may be feasible.…”

Section: Introductionmentioning

confidence: 99%

“…Within the RE –Sn–S systems, the most prevalent ternary phases are RE 2 SnS 5 ( RE = La–Nd, Sm, Gd–Dy). ,− Other sulfides that have been structurally characterized to date are La 3 Sn 1.25 S 7 and several Eu-containing ones (Eu 2 SnS 5 , Eu 3 Sn 2 S 7 , Eu 5 Sn 3 S 12 , Eu 2 SnS 4 , Eu 4 Sn 2 S 9 ). − In contrast, the only corresponding selenide that has been well characterized appears to be Eu 2 SnSe 5 . , The relative dearth of RE –Sn–Se phases is surprising given that chemically related systems such as Ba–Sn–Se contain many phases. Moreover, ternary Ba–Sn–Se phases often have no counterparts with Ba–Sn–S phases; even when they do, they may show important structural differences (e.g., two polymorphs for Ba 2 SnS 4 vs one for Ba 2 SnSe 4 ; one polymorph for Ba 2 SnS 5 vs three for Ba 2 SnSe 5 ). − The existence of other RE 2 SnSe 5 phases has been claimed; for example, La 2 SnSe 5 has been reported to be congruently melting at 1100 °C and to adopt a tetragonal structure .…”

Section: Introductionmentioning

confidence: 99%

Are Selenides the Same as Sulfides? Structure, Spectroscopy, and Properties of Narrow-Gap Rare-Earth Semiconductors RE₂Sn(S_1–xSe_x)₅ (RE = La, Ce; x = 0–0.8)

Dey,

Mumbaraddi,

Wen

et al. 2024

Inorg. Chem.

View full text Add to dashboard Cite

The ternary rare-earth sulfides RE 2 SnS 5 (RE = La−Nd) and the partial solid solutions RE 2 Sn(S 1−x Se x ) 5 (RE = La, Ce; x = 0−0.8) were prepared in the form of polycrystalline samples by reaction of the elements at 900 °C and as single crystals in the presence of KBr flux. They adopt the La 2 SnS 5 -type structure (orthorhombic, space group Pbam, Z = 2) consisting of chains of edgesharing SnCh 6 octahedra separated by RE atoms. Although the cell parameters evolve smoothly in RE 2 Sn(S 1−x Se x ) 5 , detailed structural analysis by single-crystal X-ray diffraction revealed a pronounced preference for the Se atoms to occupy two out of the three chalcogen sites, which offers a rationalization for why the all-selenide end-members RE 2 SnSe 5 do not form. Solid-state 119 Sn NMR spectra confirmed the nonrandom distribution of SnS 6−n Se n local environments, which could be resolved into individual resonances. The Raman spectra of RE 2 SnS 5 compounds show an intense peak at 307−320 cm −1 assigned to a symmetric A 1g mode, which is dominated by Sn−S bonds; the Raman peak intensities varied with Se substitution in La 2 Sn(S 1−x Se x ) 5 . Optical diffuse reflectance spectra, band structure calculations, and electrochemical impedance spectra indicated that these compounds are narrow band gap semiconductors; the optical band gaps are insensitive to RE substitution in RE 2 SnS 5 (0.7 eV) but they gradually decrease with greater Se substitution in RE 2 Sn(S 1−x Se x ) 5 (0.7−0.4 eV).

show abstract

Charge Transport and Thermoelectric Properties of Ge-Doped Famatinites Cu3Sb1−yGeyS4

Lee

Kim

2021

Electron. Mater. Lett.

View full text Add to dashboard Cite

Ternary and Quaternary Chalcogenides of Si, Ge, Sn, Pb, and In

Cited by 8 publications

References 91 publications

Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4

Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4

Are Selenides the Same as Sulfides? Structure, Spectroscopy, and Properties of Narrow-Gap Rare-Earth Semiconductors RE₂Sn(S_1–xSe_x)₅ (RE = La, Ce; x = 0–0.8)

Charge Transport and Thermoelectric Properties of Ge-Doped Famatinites Cu3Sb1−yGeyS4

Contact Info

Product

Resources

About

Ternary and Quaternary Chalcogenides of Si, Ge, Sn, Pb, and In

Cited by 8 publications

References 91 publications

Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4

Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4

Are Selenides the Same as Sulfides? Structure, Spectroscopy, and Properties of Narrow-Gap Rare-Earth Semiconductors RE2Sn(S1–xSex)5 (RE = La, Ce; x = 0–0.8)

Charge Transport and Thermoelectric Properties of Ge-Doped Famatinites Cu3Sb1−yGeyS4

Contact Info

Product

Resources

About

Are Selenides the Same as Sulfides? Structure, Spectroscopy, and Properties of Narrow-Gap Rare-Earth Semiconductors RE₂Sn(S_1–xSe_x)₅ (RE = La, Ce; x = 0–0.8)