“…In addition, for the Co 3 O 4 /CdS nano pn junction, C dl (Co/ Cd-3) exhibits a remarkable increase to ∼1.80 × 10 −2 μF•cm −2 (Figure 8a), much larger than those of Co 3 O 4 (∼1.90 × 10 −3 μF•cm −2 ) and CdS (∼3.94 × 10 −3 μF•cm −2 ), indicating the ultrathin hollow core−shell nanostructure can increase the active sites effectively. 3,51,61,62 8d), the regulated flat-band potentials (vs RHE) are 0.685 V (Co 3 O 4 ) and −0.315 V (CdS). By correction (−0.2 V/0.2 V shift for the conduction band/valence band (CB/VB)), 3,12,30,31 the corresponding VB of Co 3 O 4 is 0.885 V and CB of CdS is −0.515 V (vs RHE), respectively.…”