Ternary tetradymite compounds as topological insulators

Wang, Lin-Lin; Johnson, Duane D.

doi:10.1103/physrevb.83.241309

Cited by 86 publications

(68 citation statements)

References 27 publications

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“…It has been shown for similar samples that the carrier density in these systems is highly sensitive to the Se and Te ratio. 23,26 This upturn in resistance indicates an insulating character due to freezing out of bulk carriers as reported by others in different TI samples. One of the possible reasons suggested for the slight upturn in the R vs T plot is the presence of Coulomb interaction among the electrons in the low temperature regime in the presence of disorder.…”

Section: Resultsmentioning

confidence: 56%

“…This material exhibits property very similar to its parent compounds in terms of single Dirac cone but differ in terms of chemical potential which lies in the bulk band gap in these compounds thereby making them better TI candidates. 26 Magnetotransport data (conductance as a function of field) obtained at different temperatures for these thin films exhibits archetypal weak antilocalization (WAL) character in the low temperature regime which is a hallmark of topologically protected surface states with an odd number of Dirac cones and hence signifies a surface dominant transport of charge carriers. 29,30 …”

Section: Introductionmentioning

confidence: 99%

“…28 Furthermore, it has been theoretically proposed that BST has a large spin texture with a Dirac point in the bulk band gap. 23,26 A large spin texture promises a non-trivial Berry phase that restrains the backscattering.…”

Section: Introductionmentioning

confidence: 99%

“…24,25 We believe that an intrinsic TI state can be created by alloying two TI materials Bi 2 Te 3 and Bi 2 Se 3 to form either Bi 2 Se 2 Te (BST), Bi 2 Te 2 Se (BTS) or some intermediate ternary tetradymide alloys. [25][26][27] We were interested in the intermediate ternary compound BST since there has been limited study on it despite BST being predicted as an ideal candidate for intrinsic TI like its sister compound BTS. 28 Furthermore, it has been theoretically proposed that BST has a large spin texture with a Dirac point in the bulk band gap.…”

Section: Introductionmentioning

confidence: 99%

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Weak-antilocalization and surface dominated transport in topological insulator Bi2Se2Te

et al. 2015

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We explore the phase coherence of thin films of the topological insulator material Bi 2 Se 2 Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films were found to be of good quality. We carried out extensive magneto-transport studies of these films and found that they exhibit two dimensional weak antilocalization behaviour. A careful analysis revealed a relatively high phase coherence length (58nm at 1.78K) for a PLD grown film. Since PLD is an inexpensive technique, with the possibility to integrate with other materials, one can make devices which can be extremely useful for low power spintronics and topological quantum computation.

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Section: Resultsmentioning

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Weak-antilocalization and surface dominated transport in topological insulator Bi2Se2Te

et al. 2015

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“…Recently, several pseudobinary compounds, such as Bi 2 Se 2 Te (BiTe-BiSe 2 ) or GeBi 2 Te 4 (GeTe-Bi 2 Te 3 [GBT]), have been theoretically predicted to be 3D TIs. 19,20 GBT belongs to the family of tetradymitelike-layered pseudobinary compounds with a general chemical formula A IV B VI − A V 2 B VI 3 (A IV = Ge, Sn, Pb; A VI = Bi, Sb; B VI = Te, Se). [21][22][23][24] Compounds with such a complex, many-layered structure (up to nine atomic layers per building block) had already been studied mainly due to their thermoelectric properties.…”

Section: Introductionmentioning

confidence: 99%

Topological metal behavior in GeBi2Te4single crystals

et al. 2013

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The metallic character of the GeBi 2 Te 4 single crystals is probed using a combination of structural and physical properties measurements, together with density functional theory (DFT) calculations. The structural study shows distorted Ge coordination polyhedra, mainly of the Ge octahedra. This has a major impact on the band structure, resulting in bulk metallic behavior of GeBi 2 Te 4 , as indicated by DFT calculations. Such calculations place GeBi 2 Te 4 in a class of a few known nontrivial topological metals, and explains why an observed Dirac point lies below the Fermi energy at about −0.12 eV. A topological picture of GeBi 2 Te 4 is confirmed by the observation of surface state modulations by scanning tunneling microscopy.

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Ab Initio Calculations of Two‐Dimensional Topological Insulators*

Bihlmayer

Koroteev

Menshchikova

et al. 2015

Topological Insulators

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Since its discovery in 2005, the field of topological insulators (TIs) has experienced enormous expansion and created unforeseen activity in the solid-state physics community and beyond. Conceptually, the development of this field had its origin in the physics of the quantum Hall effect (QHE) of the two-dimensional (2D) electron gas [1,2], although today we use the topological concepts developed there to characterize also three-dimensional (3D) insulators [3]. On their surfaces, the signatures of the topology can be seen in the dispersion of the surface bands, as observed using angle-resolved photoemission spectroscopy (ARPES) and its spin-polarized angle-resolved photoemission spectroscopy (SP-ARPES) variant [4]. For the experimental verification of the quantum spin Hall effect (QSHE), however, the 2D-TIs played a vital role, and their unique transport properties are a major driving force of this field. Moreover, confining 3D topological semimetals in 2D geometries offers the possibility to open up a bandgap by size-quantization effects and create 2D TIs. A prominent example for this strategy is HgTe/CdTe quantum wells, where QSHE was observed experimentally for the first time [5].For the development of the field of TIs, the study of model Hamiltonians was definitely the first and most important theoretical tool. For many semiconductors, specialized ⋅ Hamiltonians were developed from the late 1950s, which describe the electronic structure near the bandgap with high precision. But after the experimental realization of 3D TIs comprised of different elements, density functional theory (DFT) calculations became increasingly important to describe the bulk and surface bandstructures of whole families of compounds, to investigate their topological properties. Also for 2D TIs, there are questions that are most conveniently addressed within DFT, for example, issues of structural stability, interactions with substrates, and other effects that are difficult to embody into a model Hamiltonian with sufficient accuracy.

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Ternary tetradymite compounds as topological insulators

Cited by 86 publications

References 27 publications

Weak-antilocalization and surface dominated transport in topological insulator Bi2Se2Te

Weak-antilocalization and surface dominated transport in topological insulator Bi2Se2Te

Topological metal behavior in GeBi2Te4single crystals

Ab Initio Calculations of Two‐Dimensional Topological Insulators*

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